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PDF MUN5115DW1 Data sheet ( Hoja de datos )
| Número de pieza | MUN5115DW1 | |
| Descripción | Dual PNP Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
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MUN5115DW1,
NSBA114TDXV6,
NSBA114TDP6
Dual PNP Bias Resistor
Transistors
R1 = 10 kW, R2 = 8 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5115DW1T1G,
SMUN5115DW1T1G
SOT−363
3,000/Tape & Reel
NSBA114TDXV6T1G
SOT−563
4,000/Tape & Reel
NSBA114TDXV6T5G
SOT−563
8,000/Tape & Reel
NSBA114TDP6T5G
SOT−963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
SOT−363
CASE 419B
6
0E M G
G
1
SOT−563
CASE 463A
0E M G
G
1
SOT−963
CASE 527AD
MG
G
1
0E/T
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Publication Order Number:
DTA114TD/D
1 page  
MUN5115DW1, NSBA114TDXV6, NSBA114TDP6
TYPICAL CHARACTERISTICS
NSBA114TDP6
1
IC/IB = 10
1000
150C 25C
25C
0.1
150C
−55C
0.01
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
100
10
1
50 1
−55C
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
100
7 100
6
f = 10 kHz
IE = 0 A
150C
−55C
TA = 25C
10
5
25C
41
3 0.1
2
0.01
1 VO = 5 V
0 0.001
0 10 20 30 40 50
0123 45 678
VR, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
Vin, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
100
10
25C
−55C
1
150C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
http://onsemi.com
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet MUN5115DW1.PDF ] | |
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