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PDF NOA3315W Data sheet ( Hoja de datos )
| Número de pieza | NOA3315W | |
| Descripción | Digital Proximity Sensor | |
| Fabricantes | ON Semiconductor | |
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NOA3315W
Digital Proximity Sensor
with Dual Ambient Light
Sensors and Interrupt
Description
The NOA3315W combines an advanced digital proximity sensor
and LED driver with dual ambient light sensors (ALS) and tri−mode
I2C interface with interrupt capability in an integrated monolithic
www.onsemi.com
device. Multiple power management features and very low active
sensing power consumption directly address the power requirements
of battery operated mobile phones and mobile internet devices.
The proximity sensor measures reflected light intensity with a high
degree of precision and excellent ambient light rejection. The
NOA3315W enables a proximity sensor system with a 16:1
programmable LED drive current range and a 30 dB overall proximity
detection range. The dual ambient light sensors include one with a
photopic light filter and one with no filter. Both have dark current
AMBIENT LIGHT PROXIMITY SENSOR
compensation and high sensitivity eliminating inaccurate light level
detection and insuring proper backlight control even in the presence of
dark cover glass.
ORDERING INFORMATION
The NOA3315W is ideal for improving the user experience by
enhancing the screen interface with the ability to measure distance for
near/far detection in real time and the ability to respond to ambient
Device
NOA3315W
Wafer Size
200 mm wafer
Temp Range
−40°C to 80°C
lighting conditions to control display backlight intensity.
Features
Ambient Light Sensing
• Proximity Sensor, LED Driver and Dual ALS in One
• Dual ALS senses ambient light and provides 16−bit
Device
output counts on the I2C bus directly proportional to the
• Very Low Power Consumption
♦ Stand−by current 2.8 mA (monitoring I2C interface
ambient light intensity
• Photopic Spectral Response of ALS1 Nearly Matches
only, Vdd = 3 V)
Human Eye
♦ ALS operational current 50 mA per sensor
• Broadband response of ALS2 supports compensation
♦ Proximity sensing average operational current
100 mA
♦ Average LED sink current 75 mA
• These Devices are Pb−Free, Halogen Free/BFR Free
and are RoHS Compliant
for spectral shifts encountered with different types of
cover glass
• Dynamic Dark Current Compensation
• Linear Response over the Full Operating Range
• 3 ranges – 100 counts/lux, 10 counts/lux, 1 count/lux
Proximity Sensing
• Senses Intensity of Ambient Light from 0.02 lux to 52k
• Proximity detection distance threshold I2C
programmable with 12−bit resolution and eight
lux with 21−bit Effective Resolution (16−bit converter)
• Programmable Integration Times (50 ms, 100 ms,
integration time ranges (16−bit effective resolution)
200 ms, 400 ms)
• Effective for Measuring Distances up to 200 mm and
Beyond
• Excellent IR and Ambient Light Rejection including
Sunlight (up to 50K lux) and CFL Interference
• Programmable LED Drive Current from 10 mA to
160 mA in 5 mA Steps, no External Resistor Required
• User Programmable LED Pulse Frequency
Additional Features
• Programmable interrupt function including independent
upper and lower threshold detection or threshold based
hysteresis for proximity and or ALS
• Level or Edge Triggered Interrupts
• Proximity persistence feature reduces interrupts by
providing hysteresis to filter fast transients such as
camera flash
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 0
1
Publication Order Number:
NOA3315W/D
1 page  
NOA3315W
Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise specified, these specifications apply over 2.3 V < VDD < 3.6 V,
1.7 V < VDD_I2C < 1.9 V, −40°C < TA < 80°C, 10 pF < Cb < 100 pF) (See Note 4)
Parameter
Symbol
Min Typ Max Unit
Capacitive load for each bus line (including all parasitic
capacitance) (Note 6)
Cb 10
100 pF
Noise margin at the low level (for each connected device −
including hysteresis)
VnL 0.1 VDD
−V
Noise margin at the high level (for each connected device − VnH 0.2 VDD
including hysteresis)
−V
4. Refer to Figure 2 and Figure 3 for more information on AC characteristics.
5. The rise time and fall time are dependent on both the bus capacitance (Cb) and the bus pull−up resistor Rp. Max and min pull−up resistor
values are determined as follows: Rp(max) = tr (max)/(0.8473 x Cb) and Rp(min) = (Vdd_I2C – Vol(max))/Iol.
6. Cb = capacitance of one bus line, maximum value of which including all parasitic capacitances should be less than 100 pF. Bus capacitance
up to 400 pF is supported, but at relaxed timing.
Table 5. OPTICAL CHARACTERISTICS (Unless otherwise specified, these specifications are for VDD = 3.0 V, TA = 25°C)
Parameter
Symbol
Min Typ Max Unit
AMBIENT LIGHT SENSOR 1
Spectral response, peak (Note 7)
Spectral response, low −3 dB
Spectral response, high −3 dB
Dynamic range
Maximum Illumination (ALS operational but saturated)
Resolution, Counts per lux, Tint = 400 ms, Range = 0 (100 counts/lux)
Resolution, Counts per lux, Tint = 100 ms, Range = 0 (100 counts/lux)
Resolution, Counts per lux, Tint = 50 ms, Range = 0 (100 counts/lux)
Illuminance responsivity, green 560 nm LED, Ev = 10 lux,
Tint = 50 ms, Range = 0 (100 counts/lux)
lp
lc_low
lc_high
DRALS
Ev_MAX
CR400
CR100
CR50
Rv_g10
560 nm
510 nm
610 nm
0.02 52k lux
120k
lux
800 counts
200 counts
100 counts
1000
counts
Illuminance responsivity, green 560 nm LED, Ev = 100 lux,
Tint = 50 ms, Range = 0 (100 counts/lux)
Rv_g100
10000
counts
Dark current, Ev = 0 lux, Tint = 100 ms
PROXIMITY SENSOR (Note 8)
Rvd 0 0 3 counts
Detection range, Tint = 4800 ms, ILED = 160 mA, 860 nm IR LED (OS-
RAM SFH4650), White Reflector (RGB = 220, 224, 223), LED Modu-
lation Frequency = 308 kHz, Sample Delay = 250 ns, SNR = 7:1
DPS_4800_WHITE_
MOD
200
mm
Detection range, Tint = 4800 ms, ILED = 160 mA, 860 nm IR LED (OS-
RAM SFH4650), White Reflector (RGB = 220, 224, 223), SNR = 8:1
DPS_4800_WHITE_
160
148
mm
Detection range, Tint = 4800 ms, ILED = 25 mA, 860 nm IR LED (OS-
RAM SFH4650), White Reflector (RGB = 220, 224, 223), SNR = 8:1
DPS_4800_WHITE_
25
66
mm
Detection range, Tint = 2400 ms, ILED = 50 mA, 860 nm IR LED (OS-
RAM SFH4650), White Reflector (RGB = 220, 224, 223), SNR = 8:1
DPS_2400_WHITE_
25
80
mm
Detection range, Tint = 1800 ms, ILED = 75 mA, 860 nm IR LED (OS-
RAM SFH4650), White Reflector (RGB = 220, 224, 223), SNR = 8:1
DPS_1800_WHITE_
75
88
mm
Detection range, Tint = 1200 ms, ILED = 100 mA, 860 nm IR LED (OS-
RAM SFH4650), White Reflector (RGB = 220, 224, 223), SNR = 8:1
DPS_1200_WHITE_
100
90
mm
Detection range, Tint = 600 ms, ILED = 125 mA, 860 nm IR LED (OS-
RAM SFH4650), White Reflector (RGB = 220, 224, 223), SNR = 8:1
DPS_600_WHITE_
125
88
mm
Detection range, Tint = 600 ms, ILED = 100 mA, 860 nm IR LED (OS-
RAM SFH4650), White Reflector (RGB = 220, 224, 223), SNR = 8:1
DPS_600_WHITE_
100
76
mm
7. Refer to Figure 4 for more information on spectral response.
8. Measurements performed with default modulation frequency and sample delay unless noted.
www.onsemi.com
5
5 Page 
NOA3315W
Description of Operation
Proximity Sensor Architecture
NOA3315W combines an advanced digital proximity
sensor, LED driver, dual ambient light sensors and a
tri−mode I2C interface as shown in Figure 1. The LED driver
draws a modulated current through the external IR LED to
illuminate the target. The LED current is programmable
over a wide range. The infrared light reflected from the
target is detected by the proximity sensor photo diode. The
proximity sensor employs a sensitive photo diode fabricated
in ON Semiconductor’s standard CMOS process
technology. The modulated light received by the on−chip
photodiode is converted to a digital signal using a variable
slope integrating ADC with a default resolution (at 300 ms)
of 12−bits, unsigned. The signal is processed to remove all
unwanted signals resulting in a highly selective response to
the generated light signal. The final value is stored in the
PS_DATA register where it can be read by the I2C interface.
Proximity Sensor LED Frequency and Delay Settings
The LED current modulation frequency is user selectable
from approximately 128 KHz to 2 MHz using the
PS_LED_FREQUENCY register. An internal precision
4 MHz oscillator provides the frequency reference. The
4 MHz clock is divided by the value in register 0x0D to
determine the pulse rate. The default is 0x10 (16) which
results in an LED pulse frequency of 250 KHz (4 ms period).
Values below 200 KHz and above 1 MHz are not
recommended.
Switching high LED currents can result in noise injected into
the proximity sensor receiver causing inaccurate readings. The
PS receiver has a user programmable delay from the LED edge
to when the receiver samples the data (PS_SAMPLE_DELAY
– register 0x0E). Longer delays may reduce the effect of
switching noise but also reduce the sensitivity.
Since the value of the delay is dependent on the pulse
frequency, its value must be carefully computed. The value
obviously cannot exceed the LED pulse width or there
would be no sampling of the data when the LED is
illuminated. There is also a minimum step size of 125 ns.
The delay values are programmed as follows:
0 or 1: No delay
2−31: Selects (N−1)*125 ns
N must be less than or equal to the
PS_LED_FREQUENCY Value
The default delay is 0x05 (500 ns)
Table 6 shows some common LED pulse frequencies and
sample delays and the resulting register values.
Table 6. COMMON LED PULSE FREQUENCY SETTINGS
LED Pulse
Frequency (KHz)
Sample Delay (ns)
PS_LED_ FREQUENCY Register
(0x0D) Value
200 250
0x14
200 500
0x14
PS_SAMPLE_ DELAY Register
(0x0E) Value
0x03
0x05
200 750
250 250
250 500
500 250
500 500
0x14
0x10
0x10
0x08
0x08
0x07
0x03
0x05
0x03
0x05
1000
250
0x04
0x03
Ambient Light Sensor Architecture
The NOA3315W contains two ambient light sensors. The
first ambient light sensor employs a photo diode with its own
proprietary photopic filter limiting extraneous photons, and
thus performing as a band pass filter on the incident wave
front. The filter only transmits photons in the visible spectrum
which are primarily detected by the human eye. The photo
response of this sensor is as shown in Figure 4. The second
ambient light sensor employs a similar photo diode but
without a light filter. Either or both ALS can be enabled.
When disabled, an ALS is put in power down mode.
The ambient light signal detected by each photo diode is
converted to a digital signal using a variable slope integrating
ADC with a resolution of 16−bits, unsigned. The ADC values
are stored in the ALS1_DATA and ALS2_DATA registers
where they can be read by the I2C interface.
Equation 1 shows the relationship of output counts Cnt as
a function of integration constant Ik, integration time Tint (in
seconds) and the intensity of the ambient light, IL(in lux), at
room temperature (25°C) for ALS1.
IL
+
ǒIk
Cnt
@ TintǓ
(eq. 1)
Where:
Ik = 2000 counts/lux*s (for fluorescent light)
Ik = 2900 counts/lux*s (for incandescent light)
Hence the intensity of the ambient fluorescent light (in lux):
IL
+
Cnt
ǒ2000 @
TintǓ
(eq. 2)
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11
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| PDF Descargar | [ Datasheet NOA3315W.PDF ] | |
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