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NSBA123TDP6 데이터시트 PDF




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부품번호 NSBA123TDP6 기능
기능 Dual PNP Bias Resistor Transistors
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NSBA123TDP6 데이터시트, 핀배열, 회로
NSBA123TDP6
Dual PNP Bias Resistor
Transistors
R1 = 2.2 kW, R2 = 8 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
This Device is Pb-Free, Halogen Free/BFR Free and is RoHS
Compliant
MAXIMUM RATINGS
(TA = 25C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current Continuous IC 100 mAdc
Input Forward Voltage
VIN(fwd)
12
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping
NSBA123TDP6T5G
SOT963
8,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAM
SOT963
CASE 527AD
MG
1G
L = Specific Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Semiconductor Components Industries, LLC, 2012
September, 2012 Rev. 0
1
Publication Order Number:
DTA123TD/D




NSBA123TDP6 pdf, 반도체, 판매, 대치품
NSBA123TDP6
TYPICAL CHARACTERISTICS
NSBA123TDP6
1
IC/IB = 10
25C
0.1 150C
55C
1000
100
10
0.01
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
1
50 1
150C
25C
55C
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
7 100
6
5
f = 10 kHz
IE = 0 A
TA = 25C
150C
10
25C
55C
41
3 0.1
2
0.01
1 VO = 5 V
0 0.001
0 10 20 30 40 50
0
1
23
VR, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
Vin, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
100
10
25C
55C
1
150C
0.1
0
10
VO = 0.2 V
20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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NSBA123TDP6

Dual PNP Bias Resistor Transistors

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