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PDF NSM4002MR6 Data sheet ( Hoja de datos )
| Número de pieza | NSM4002MR6 | |
| Descripción | Dual NPN Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NSM4002MR6
Dual NPN Transistors for
Driving LEDs
NSM4002MR6 contains a single two NPN transistors. The base of
the Q2 NPN transistor is internally connected to the collector of the Q1
NPN transistor. This device is designed to replace a discrete solution
that is common for providing a constant current by integrating these
two components into a single device. NSM4002MR6 is housed in a
SC−74 package which is ideal for surface mount applications in space
constrained applications.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LED Lighting
• Driver Circuits
MAXIMUM RATINGS Q1 (TA = 25°C)
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
MAXIMUM RATINGS Q2 (TA = 25°C)
VCEO
VCBO
VEBO
IC
40 Vdc
60 Vdc
6.0 Vdc
200 mAdc
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
45 Vdc
Collector −Base Voltage
VCBO
50 Vdc
Emitter −Base Voltage
VEBO
5.0 Vdc
Collector Current − Continuous
IC 500 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
(Note 1)
260
2.08
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
1. FR− 4, 100 mm2, 2 oz. Cu.
2. FR− 4, 500 mm2, 2 oz. Cu.
RqJA
(Note 1)
480
°C/W
PD
(Note 2)
300
2.4
mW
mW/°C
RqJA
(Note 2)
416
°C/W
TJ, Tstg −55 to +150 °C
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 1
1
www.onsemi.com
Dual NPN Transistors
for Driving LEDs
654
6, 5
Q2
Q1 Q1
4
Q2
123
12 3
654
1 23
SC−74
CASE 318F
MARKING DIAGRAM
1AM MG
G
1AM
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSM4002MR6T1G SC−74
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSM4002MR6/D
1 page  
NSM4002MR6
TYPICAL CHARACTERISTICS − Q1
0.8
0.7 IC/IB = 10
0.6
0.5
0.4
150°C
25°C
−55°C
0.3
0.2
0.1
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
1.4
1.2 VCE = 1 V
1.0
−55°C
0.8
25°C
0.6
0.4 150°C
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Voltage vs. Collector
Current
1.4
IC/IB = 10
1.2
1.0
−55°C
0.8
25°C
0.6
0.4 150°C
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.5
qVC FOR VCE(sat)
0
- 0.5
- 1.0
- 1.5 qVB FOR VBE(sat)
+25°C TO +125°C
- 55°C TO +25°C
- 55°C TO +25°C
+25°C TO +125°C
- 2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA)
Figure 7. Temperature Coefficients
www.onsemi.com
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| PDF Descargar | [ Datasheet NSM4002MR6.PDF ] | |
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