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PDF NTMFD4C50N Data sheet ( Hoja de datos )
| Número de pieza | NTMFD4C50N | |
| Descripción | Dual N-Channel Power MOSFET | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTMFD4C50N
Dual N-Channel Power
MOSFET
30 V, High Side 18 A / Low Side 27 A, Dual
N−Channel SO8FL
Features
• Co−Packaged Power Stage Solution to Minimize Board Space
• Minimized Parasitic Inductances
• Optimized Devices to Reduce Power Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• System Voltage Rails
• Point of Load
http://onsemi.com
V(BR)DSS
Q1 Top FET
30 V
Q2 Bottom
FET
30 V
RDS(ON) MAX
7.3 mW @ 10 V
10.8 mW @ 4.5 V
3.4 mW @ 10 V
5.2 mW @ 4.5 V
ID MAX
18 A
27 A
D1 (2, 3, 4, 9)
(1) G1
S1/D2 (10)
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 2
(8) G2
S2 (5, 6, 7)
PIN CONNECTIONS
D1 4
5 S2
D1 3
D1 2
9 10
D1 S1/D2
6 S2
7 S2
G1 1
(Bottom View)
8 G2
MARKING
DIAGRAM
1
DFN8
CASE 506BX
4C50N
AYWZZ
1
4C50N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
1 Publication Order Number:
NTMFD4C50N/D
1 page  
NTMFD4C50N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
FET Symbol
Test Condition
Min Typ Max Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
Q1
Q2 tRR
23
38
Charge Time
Discharge Time
Q1
ta
Q2
Q1 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A
tb
Q2
11.6
18.6
11.4
19.4
ns
Reverse Recovery Charge
Q1
Q2
QRR
10
nC
25
PACKAGE PARASITIC VALUES
Source Inductance
Q1
Q2 LS
0.38
nH
0.65
Drain Inductance
Gate Inductance
Q1
Q2 LD
Q1
Q2 LG
TA = 25°C
0.054
0.007
1.5
1.5
nH
nH
Gate Resistance
Q1
Q2 RG
1.0
W
1.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
Package
Shipping†
NTMFD4C50NT1G
DFN8
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
5 Page 
NTMFD4C50N
TYPICAL CHARACTERISTICS − Q2
100
Duty Cycle = 50%
10 20%
10%
5%
2%
1 1%
0.1
0.01 Single Pulse
0.000001 0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 28. Thermal Response
1
10 100 1000
120 100
100
80 TA = 25°C
TA = 85°C
60 10
40
20
0
0 10 20 30 40 50 60 70 80
ID (A)
Figure 29. GFS vs. ID
1
1.E−07
1.E−06
1.E−05
1.E−04 1.E−03
PULSE WIDTH (SECONDS)
Figure 30. Avalanche Characteristics
http://onsemi.com
11
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| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NTMFD4C50N.PDF ] | |
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