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부품번호 | NVJD5121N 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
NVJD5121N
Power MOSFET
60 V, 300 mA, Dual N−Channel with ESD
Protection, SC−88
Features
• Low RDS(on)
• Low Gate Threshold
• Low Input Capacitance
• ESD Protected Gate
• NVJD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• This is a Pb−Free Device
Applications
• Low Side Load Switch
• DC−DC Converters (Buck and Boost Circuits)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 85°C
t ≤ 5 s TA = 25°C
TA = 85°C
Steady TA = 25°C
State
VDSS
VGS
ID
PD
60 V
±20 V
300 mA
233
310
240
300 mW
t≤5s
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ, TSTG
319
1200
−55 to
175
mA
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS 250 mA
TL 260 °C
Gate−Source ESD Rating (HBM)
Gate−Source ESD Rating (MM)
ESDHBM
ESDMM
2000
200
V
V
THERMAL RESISTANCE RATINGS
Parameter
Symbol Value Unit
Junction−to−Ambient – Steady State
RqJA
500 °C/W
Junction−to−Ambient – t ≤ 5 s
RqJA
470
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
1.6 W @ 10 V
2.5 W @ 4.5 V
ID Max
300 mA
SC−88 (SOT−363)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
6
1
SC−88/SOT−363
CASE 419B
STYLE 26
VTF M G
G
1
S1 G1 D2
VTF = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NVJD5121NT1G SC−88 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 0
1
Publication Order Number:
NVJD5121N/D
NVJD5121N
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
40
30 Ciss
TJ = 25°C
VGS = 0 V
5
ID = 0.2 A
4
TJ = 25°C
VDD = 25 V
3
20
2
10 Coss
Crss
1
00
0
4
8
12 16 20 0
0.2 0.4 0.6 0.8
1
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1
VGS = 0 V
0.1
TJ = 85°C
TJ = 25°C
0.01
0.4 0.6 0.8
1
1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
http://onsemi.com
4
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부품번호 | 상세설명 및 기능 | 제조사 |
NVJD5121N | Power MOSFET ( Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |