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6HN04MH 데이터시트 PDF




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부품번호 6HN04MH 기능
기능 N-Channel Silicon MOSFET
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6HN04MH 데이터시트, 핀배열, 회로
6HN04MH
Ordering number : ENA0365A
6HN04MH
Features
4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
When mounted on ceramic substrate (900mm20.8mm)
Ratings
60
±20
200
800
0.6
150
--55 to +150
Unit
V
V
mA
mA
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FB
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=100µA
VDS=10V, ID=100mA
ID=100mA, VGS=10V
ID=50mA, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
min
60
1.2
140
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
240 mS
1.8 2.4
2.6 3.7
27 pF
8.6 pF
4.4 pF
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
6HN04MH/D




6HN04MH pdf, 반도체, 판매, 대치품
6HN04MH
PD -- Ta
0.7
When mounted on ceramic substrate
(900mm20.8mm)
0.6
0.5
0.4
0.3
0.2
0.1
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT11273
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any
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Rev.0 I Page 4 of 4 I www.onsemi.com
6HN04MH/D

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