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Número de pieza | ECH8616 | |
Descripción | N-Channel Silicon MOSFET | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! ECH8616
Ordering number : ENN8191
N-Channel Silicon MOSFET
ECH8616 General-Purpose Switching Device
Applications
Features
• Ultrahigh-speed switching.
• 4V drive.
• Composite type, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
Mounted on a ceramic board (900mm2✕0.8mm)
Ratings
60
±20
3
20
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : FJ
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.5A, VGS=4V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
60
1.2
2.2
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.6 V
3.8 S
70 93 mΩ
92 133 mΩ
560 pF
60 pF
41 pF
11 ns
11 ns
61 ns
32 ns
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
ECH8616/D
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet ECH8616.PDF ] |
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