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VS-20L15TSPbF 데이터시트 PDF




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부품번호 VS-20L15TSPbF 기능
기능 High Performance Schottky Rectifier
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VS-20L15TSPbF 데이터시트, 핀배열, 회로
www.vishay.com
VS-20L15TSPbF
Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
Base
cathode
2
TO-263AB (D2PAK)
13
N/C Anode
PRODUCT SUMMARY
IF(AV)
VR
VF at IF
IRM max.
TJ max.
EAS
Package
Diode variation
20 A
15 V
0.33 V
600 mA at 100 °C
125 °C
10 mJ
TO-263AB (D2PAK)
Single die
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
tp = 5 μs sine
VF 19 Apk, TJ = 125 °C (typical)
TJ Range
FEATURES
• 125 °C TJ operation (VR < 5 V)
• Single diode configuration
• Optimized for OR-ing applications
• Ultralow forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The Schottky rectifier module has been optimized for ultra
low forward voltage drop specifically for the OR-ing of
parallel power supplies. The proprietary barrier technology
allows for reliable operation up to 125 °C junction
temperature. Typical applications are in parallel switching
power supplies, converters, reverse battery protection, and
redundant power subsystems.
VALUES
20
15
700
0.25
-55 to +125
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
TEST CONDITIONS
TJ = 100 °C
VS-20L15TSPbF
15
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle non-repetitive
surge current
See fig. 7
IFSM
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
VALUES
50 % duty cycle at TC = 85 °C, rectangular waveform
20
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 2 A, L = 6 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
700
330
10
2
UNITS
A
mJ
A
Revision: 24-Jul-14
1 Document Number: 94166
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




VS-20L15TSPbF pdf, 반도체, 판매, 대치품
www.vishay.com
100
95
90
Square wave (D = 0.50)
85
80
75
See note (1)
70
0 4 8 12 16 20 24
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
1000
VS-20L15TSPbF
Vishay Semiconductors
14
D = 0.20
12
D = 0.25
D = 0.33
D = 0.50
10 D = 0.75
8
6 RMS limit
4
2 DC
0
0 5 10 15 20 25 30
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
D.U.T.
Current
monitor
L
IRFP460
Rg = 25 Ω
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 24-Jul-14
4 Document Number: 94166
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-20L15TSPbF 전자부품, 판매, 대치품
Outline Dimensions
Vishay High Power Products
D2PAK, TO-262
DIMENSIONS FOR TO-262 in millimeters and inches
Modified JEDEC outline TO-262
(Datum A) (2) (3)
E
A
(3) L1
D
A
c2
B
A
Seating
plane
1 23
L2 C C
BB
L (2)
E
D1 (3)
2xe
0.010 M A M B
Lead tip
3 x b2
3xb
cA
A1
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
E1 (3)
Section A - A
Plating
(4)
b1, b3
Base
metal
c c1 (4)
(b, b2)
Section B - B and C - C
Scale: None
SYMBOL
MILLIMETERS
MIN.
MAX.
A 4.06 4.83
A1 2.03 3.02
b 0.51 0.99
b1 0.51 0.89
b2 1.14 1.78
b3 1.14 1.73
c 0.38 0.74
c1 0.38 0.58
c2 1.14 1.65
D 8.51 9.65
D1 6.86 8.00
E 9.65 10.67
E1 7.90 8.80
e 2.54 BSC
L
13.46
14.10
L1 - 1.65
L2 3.56 3.71
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not
exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
0.530
-
0.140
INCHES
0.100 BSC
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
0.555
0.065
0.146
NOTES
4
4
4
2
3
2, 3
3
3
(6) Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
www.vishay.com
2
For technical questions concerning discrete products, contact: [email protected]
For technical questions concerning module products, contact: [email protected]
Document Number: 95014
Revision: 31-Mar-09

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VS-20L15TSPbF

High Performance Schottky Rectifier

Vishay
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