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VS-40CTQ045S-M3 데이터시트 PDF




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부품번호 VS-40CTQ045S-M3 기능
기능 High Performance Schottky Rectifier
제조업체 Vishay
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VS-40CTQ045S-M3 데이터시트, 핀배열, 회로
www.vishay.com
VS-40CTQ045S-M3, VS-40CTQ045-1-M3
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 20 A
D2PAK
TO-262
Base
common
cathode
2
Base
common
cathode
2
2
1 Common 3
Anode cathode Anode
VS-40CTQ045S-M3
2
1 Common 3
Anode cathode Anode
VS-40CTQ045-1-M3
PRODUCT SUMMARY
IF(AV)
VR
2 x 20 A
45 V
VF at IF
0.48 V
IRM max.
115 mA at 125°C
TJ max.
EAS
Package
150 °C
20 mJ
TO-263AB (D2PAK), TO-262AA
Diode variation
Common cathode
FEATURES
• 150 °C TJ operation
• Center tap configuration
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier has been optimized for
very low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
Rectangular waveform
tp = 5 μs sine
VF 20 Apk, TJ = 125 °C (per leg)
TJ Range
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VALUES
40
45
1240
0.48
-55 to 150
VS-40CTQ045S-M3
VS-40CTQ045-1-M3
45
UNITS
A
V
A
V
°C
UNITS
V
Revision: 26-Feb-14
1 Document Number: 94935
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




VS-40CTQ045S-M3 pdf, 반도체, 판매, 대치품
www.vishay.com
VS-40CTQ045S-M3, VS-40CTQ045-1-M3
Vishay Semiconductors
150
145
140
135 DC
130
125
120
Square wave (D = 0.50)
115 80 % rated VR applied
110
105 See note (1)
100
0
5 10 15 20 25 30
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
18
D = 0.20
16 D = 0.25
14
D = 0.33
D = 0.50
12 D = 0.75
10 RMS limit
8
6
DC
4
2
0
0 5 10 15 20 25 30
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
10 000
At any rated load condition
and with rated VRRM applied
following surge
1000
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
D.U.T.
Current
monitor
L
IRFP460
Rg = 25 Ω
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V
Revision: 26-Feb-14
4 Document Number: 94935
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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VS-40CTQ045S-M3 전자부품, 판매, 대치품
TO-262
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Modified JEDEC outline TO-262
(Datum A) (2) (3)
E
A
(3) L1
D
1 23
L2 C C
BB
L (2)
A
c2
B
A
Seating
plane
E
D1 (3)
2xe
0.010 M A M B
Lead tip
3 x b2
3xb
cA
A1
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
E1 (3)
Section A - A
Plating
(4)
b1, b3
Base
metal
c c1 (4)
(b, b2)
Section B - B and C - C
Scale: None
SYMBOL
MILLIMETERS
MIN.
MAX.
A 4.06 4.83
A1 2.03 3.02
b 0.51 0.99
b1 0.51 0.89
b2 1.14 1.78
b3 1.14 1.73
c 0.38 0.74
c1 0.38 0.58
c2 1.14 1.65
D 8.51 9.65
D1 6.86 8.00
E 9.65 10.67
E1 7.90 8.80
e 2.54 BSC
L
13.46
14.10
L1 - 1.65
L2 3.56 3.71
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
MIN.
0.160
0.080
0.020
0.020
0.045
0.045
0.015
0.015
0.045
0.335
0.270
0.380
0.311
0.530
-
0.140
INCHES
0.100 BSC
MAX.
0.190
0.119
0.039
0.035
0.070
0.068
0.029
0.023
0.065
0.380
0.315
0.420
0.346
0.555
0.065
0.146
NOTES
4
4
4
2
3
2, 3
3
3
(4) Dimension b1 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Outline conform to JEDEC TO-262 except A1 (maximum), b
(minimum) and D1 (minimum) where dimensions derived the
actual package outline
Document Number: 95419 For technical questions within your region, please contact one of the following:
Revision: 04-Oct-10
www.vishay.com
1

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부품번호상세설명 및 기능제조사
VS-40CTQ045S-M3

High Performance Schottky Rectifier

Vishay
Vishay

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