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PDF MJD13003 Data sheet ( Hoja de datos )
| Número de pieza | MJD13003 | |
| Descripción | NPN SILICON POWER TRANSISTOR | |
| Fabricantes | ON Semiconductor | |
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MJD13003
High Voltage
SWITCHMODET Series
DPAK For Surface Mount Applications
This device is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. It is particularly
suited for 115 and 220 V SWITCHMODE applications such as
http://onsemi.com
switching regulators, inverters, motor controls, solenoid/relay drivers
and deflection circuits.
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No
Suffix)
NPN SILICON
POWER TRANSISTOR
1.5 AMPERES
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
400 VOLTS, 15 WATTS
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Reverse Biased SOA with Inductive Loads @ TC = 100_C
• Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100_C . . .
tc @ 1.0 A,
100_C is 290 ns (Typ)
CASE 369A−13
• 700 V Blocking Capability
• Switching and SOA Applications Information
• Electrically Similar to the Popular MJE13003
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
Symbol
VCEO(sus)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
PD
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient (2)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for
Soldering Purposes
RθJC
RθJA
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.
Value
400
700
9
1.5
3
0.75
1.5
2.25
4.5
1.56
0.0125
15
0.12
−65 to + 150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
W/_C
Watts
W/_C
_C
Max Unit
8.33 _C/W
80 _C/W
260 _C
CASE 369−07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
inches
mm
(2) When surface mounted on minimum pad sizes recommended.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 2
1
Publication Order Number:
MJD13003/D
1 page  
MJD13003
ICPK Vclamp
90% Vclamp 90% IC
IC tsv trv tfi tti
VCE
IB 90% IB1
tc
10% Vclamp
10%
ICPK 2% IC
TIME
Figure 7. Inductive Switching Measurements
Table 2. Typical Inductive Switching Performance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎIC TC tsv trv tfi tti tc
AMP _C μs μs μs μs μs
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ0.5 25
1.3 0.23 0.30 0.35 0.30
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ100 1.6 0.26 0.30 0.40 0.36
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1 25 1.5 0.10 0.14 0.05 0.16
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ100 1.7 0.13 0.26 0.06 0.29
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1.5 25
1.8 0.07 0.10 0.05 0.16
100 3 0.08 0.22 0.08 0.28
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎNOTE: All Data Recorded in the Inductive Switching Circuit in
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTable 1
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage
waveforms are not in phase. Therefore, separate
measurements must be made on each waveform to
determine the total switching time. For this reason, the
following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10 −90% Vclamp
tfi = Current Fall Time, 90 −10% IC
tti = Current Tail, 10 −2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching
waveforms is shown in Figure 7 to aid in the visual identity
of these terms.
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained
using the equation:
PSWT = 1/2 VCCIC(tc)f
In general, trv + tfi ≈ tc. However, at lower test currents this
relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified at 25_C and has become a benchmark
for designers. However, for designers of high frequency
converter circuits, the user oriented specifications which
make this a “SWITCHMODE” transistor are the inductive
switching speeds (tc and tsv) which are guaranteed at 100_C.
http://onsemi.com
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