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PDF MMFT2N25E Data sheet ( Hoja de datos )
| Número de pieza | MMFT2N25E | |
| Descripción | High Energy Power FET | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MMFT2N25E
Product Preview
High Energy Power FET
N−Channel Enhancement−Mode Silicon
Gate
This advanced high voltage MOSFET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high
energy device also offers a drain−to−source diode with fast recovery
time. Designed for high voltage, high speed switching applications
such as power supplies, PWM motor controls and other inductive
loads, the avalanche energy capability is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• Internal Source−to−Drain Diode Designed to Replace External Zener
Transient Suppressor − Absorbs High Energy in the Avalanche Mode
• Source−to−Drain Diode Recovery Time Comparable to Discrete Fast
Recovery Diode
http://onsemi.com
POWER FET
2.0 AMPERES, 250 VOLTS
RDS(on) = 3.5 W
4
CASE 318E−04, STYLE 3
12
TO−261AA
3
2,4
D
1
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Drain−to−Source Voltage
VDSS
Drain−to−Gate Voltage, RGS = 1.0 mW
Gate−to−Source Voltage — Continuous
VDGR
VGS
Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS)
VGSM
Drain Current — Continuous @ TC = 25°C
Drain Current — Continuous @ TC = 100°C
Drain Current — Single Pulse (tp ≤ 10 mS)
ID
ID
IDM
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total PD @ TA = 25°C mounted on 1″ Sq. Drain Pad on FR−4 Bd. Material
Total PD @ TA = 25°C mounted on 0.7″ Sq. Drain Pad on FR−4 Bd. Material
Total PD @ TA = 25°C mounted on min. Drain Pad on FR−4 Bd. Material
PD
Operating and Storage Temperature Range
TJ, Tstg
UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Drain−to−Source Avalanche Energy — Starting TJ = 25°C
(VDD = 80 V, VGS = 10 V, Peak IL= 4.0 Apk, L = 3.0 mH, RG = 25 Ω)
EAS
THERMAL CHARACTERISTICS
— Junction−to−Ambient on 1″ Sq. Drain Pad on FR−4 Bd. Material
— Junction−to−Ambient on 0.7″ Sq. Drain Pad on FR−4 Bd. Material
— Junction−to−Ambient on min. Drain Pad on FR−4 Bd. Material
RθJA
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
TL
S
3
Value
250
250
± 20
± 40
2.0
0.6
7.0
0.77
6.2
1.0
1.2
0.8
−55 to 150
26
90
103
162
260
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Apk
Watts
mW/°C
Watts
°C
mJ
°C/W
°C
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 2
1
Publication Order Number:
MMFT2N25E/D
1 page  
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
1.0E-5
1.0E-4
MMFT2N25E
1.0E-3
1.0E-2
1.0E-1
t, TIME (seconds)
1.0E+0
Figure 13. Thermal Response
1.0E+1
1.0E+2
1.0E
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MMFT2N25E.PDF ] | |
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