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PDF NDUL03N150C Data sheet ( Hoja de datos )

Número de pieza NDUL03N150C
Descripción N-Channel Power MOSFET / Transistor
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! NDUL03N150C Hoja de datos, Descripción, Manual

Ordering number : ENA2218
NDUL03N150C
N-Channel Power MOSFET
1500V, 2.5A, 10.5Ω, TO-3PF-3L
http://onsemi.com
Features
ON-resistance RDS(on)=8Ω (typ.)
Input capacitance Ciss=650pF (typ.)
10V drive
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Tch
Storage Temperature
Tstg
Avalanche Energy (Single Pulse) *1
EAS
Avalanche Current *2
IAV
Note :*1 VDD=50V, L=10mH, IAV=2.5A (Fig.1)
*2 L10mH, single pulse
Conditions
Limited only maximum temperature Tch=150°C
PW10μs, duty cycle1%
Tc=25°C
TO-3PF-3L
Ratings
1500
±30
2.5
5
3.0
50
150
--55 to +150
34
2.5
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
trr
Qrr
ID=10mA, VGS=0V
VDS=1200V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=1.25A
ID=1.25A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
VDS=200V, VGS=10V, ID=2.5A
IS=2.5A, VGS=0V
See Fig.3
IS=2.5A, VGS=0V, di/dt=100A/μs
min
1500
Ratings
typ
2
1.9
8
650
70
20
15
24
140
47
34
4.7
15
0.8
350
2220
max
1
±100
4
10.5
1.5
Unit
V
mA
nA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
September, 2013
92513 TKIM TC-00003021/ No. A2218-1/5

1 page




NDUL03N150C pdf
NDUL03N150C
Fig.1 Unclamped Inductive Switching Test Circuit
50Ω
RG G
D
L
NDUL03N150C
10V
0V
S
50Ω
VDD
Fig.2 Switching Time Test Circuit
VIN
10V
0V
VIN
PW10μs
D.C.1%
VDD=200V
ID=1.25A
RL=152Ω
D VOUT
G
S NDUL03N150C
P.G 50Ω
Fig.3 Reverse Recovery Time Test Circuit
D
NDUL03N150C
G
S
500μH
VDD=50V
Driver MOSFET
Note on usage : Since the NDUL03N150C is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A2218-5/5

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