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부품번호 | MJE13009-K 기능 |
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기능 | SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS | ||
제조업체 | Unisonic Technologies | ||
로고 | |||
UNISONIC TECHNOLOGIES CO., LTD
MJE13009-K
NPN SILICON TRANSISTOR
SWITCHMODE SERIES NPN
SILICON POWER
TRANSISTORS
DESCRIPTION
The MJE13009-K is designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. They
are particularly suited for 115 and 220V switch mode applications
such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
FEATURES
* VCEO 400V and 300 V
* Reverse Bias SOA with Inductive Loads @ TC = 100°C
* Inductive Switching Matrix 3 ~ 12 Amp, 25 and 100°C
tC @ 8 A, 100°C is 120 ns (Typ).
*700 V Blocking Capability
*SOA and Switching Applications Information.
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13009L-K-TA3-T MJE13009G-K-TA3-T
MJE13009L-K-T3P-T MJE13009G-K-T3P-T
Package
TO-220
TO-3P
Pin Assignment
123
BCE
BCE
Packing
Tube
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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MJE13009-K
NPN SILICON TRANSISTOR
TABLE 1. TEST CONDITIONS FOR DYNAMIC PERFORMANCE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
5V
PW
DUTY CYCLE ≤ 10% 68
tR, tF ≤ 10 ns
+5V
0.001µF
1N4933
33
MJE210
33 1N4933
2N2222
1k
RB
1k
+5V
IB
VCC
L
IC
1N4933
0.02µF 270
Note:
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
1k
2N2905
47 100
1/2W
D.U.T.
MJE200
-VBE(OFF)
MR826*
VCLAMP
*SELECTED FOR . 1 kV
5.1k
VCE
51
RESISTIVE SWITCHING
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200μH/20A
LCOIL = 200μH
VCC = 20V
VCLAMP = 300VDC
VCC = 125V
RC = 15Ω
D1 = 1N5820 or Equiv.
RB = Ω
+10V
25µs
0
-8V
tR, tF < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 9
QW-R223-007.A
4페이지 MJE13009-K
TYPICAL CHARATERISTICS
NPN SILICON TRANSISTOR
Fig. 3 Forward Bias Power Derating
1
Second Breakdown
0.8 Derating
0.6
Thermal
0.4 Derating
0.2
0
20 40 60 80 100 120 140 160
Case Temperature, TC (°C)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC - VCE limits of the transistor
that must be observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the curves
indicate.
The data of Fig. 1 is based on TC=25°C; TJ(PK) is variable
depending on power level. Second breakdown pulse limits are
valid for duty cycles to 10% but must be derated when TC ≥ 25°C.
Second breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on Fig. 1 may
be found at any case temperature by using the appropriate curve
on Fig. 3.
TJ(PK) may be calculated from the data in Fig. 4. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown. Use of reverse biased safe operating
area data (Fig. 2) is discussed in the applications information
section.
Fig. 4 Typical Thermal Response [ZθJC(t)]
1
0.7
0.5
D = 0.5
0.3 0.2
0.2
0.1
0.1
0.07 0.05
0.05 0.02
0.03
0.02 0.01
0.01
0.01 0.02
Single Pulse
0.05 0.1
0.2
0.5 1
ZθJC(t) = r(t) θJC
P(PK)
θJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(PK) – TC = P(PK) ZθJC(t)
t1
t2
Duty Cycle, D = t1/t2
2 5 10 20
Time, t (ms)
50 100 200
500 1.0k
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 9
QW-R223-007.A
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부품번호 | 상세설명 및 기능 | 제조사 |
MJE13009-K | SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS | Unisonic Technologies |
MJE13009-Q | NPN SILICON TRANSISTOR | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |