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PDF PJD10P10A Data sheet ( Hoja de datos )

Número de pieza PJD10P10A
Descripción 100V P-Channel Enhancement Mode MOSFET
Fabricantes Pan Jit International　
Logotipo Pan Jit International Logotipo



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PPJD10P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-10 A
Features
RDS(ON), VGS@-10V,ID@-5A<210mΩ
RDS(ON), VGS@-4.5V,ID@-3A<230mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: TO-252 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0104 ounces, 0.297grams
TO-252
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note 1)
Power Dissipation
Continuous Drain Current
Power Dissipation
Power Dissipation
TC=25oC
TC=100oC
TC=25oC
TC=25oC
TC=100oC
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance(Note 4,5) Junction to Case
Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
TJ,TSTG
RθJC
RθJA
LIMIT
-100
+20
-10
-6
-40
54
22
-2.0
-1.6
2.0
1.3
-55~150
2.3
62.5
UNITS
V
V
A
W
A
A
W
oC
oC/W
July 21,2015-REV.00
Page 1

1 page




PJD10P10A pdf
PPJD10P10A
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Thermal Transient Impedance
July 21,2015-REV.00
Page 5

5 Page










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