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PDF PJD14P06-AU Data sheet ( Hoja de datos )
| Número de pieza | PJD14P06-AU | |
| Descripción | 60V P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Pan Jit International | |
| Logotipo |  |
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PPJD14P06-AU
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-14 A
Features
RDS(ON), VGS@-10V,ID@-7A<115mΩ
RDS(ON), VGS@-4.5V,ID@-3.5A<160mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Acqire quality system certificate : TS16949
AEC-Q101 qualified
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0104 ounces, 0.297grams
TO-252
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
Single Pulse Avalanche Energy (Note 2)
Power Dissipation
TC=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient (Note 1)
VDS
VGS
ID
IDM
EAS
PD
TJ,TSTG
RθJC
RθJA
Limited only By Maximum Junction Temperature
LIMIT
-60
+20
-14
-32
42
45
0.3
-55~175
3.33
62.5
UNITS
V
V
A
A
mJ
W
W/ oC
oC
oC/W
August 3,2015-REV.00
Page 1
1 page  
PPJD14P06-AU
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Thermal Transient Impedance
August 3,2015-REV.00
Page 5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PJD14P06-AU.PDF ] | |
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