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PJD14P10A PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 PJD14P10A
기능 100V P-Channel Enhancement Mode MOSFET
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PJD14P10A 데이터시트, 핀배열, 회로
PPJD14P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-14 A
Features
RDS(ON), VGS@-10V,ID@-7A<140mΩ
RDS(ON), VGS@-4.5V,ID@-3A<170mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case:TO-252 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0104 ounces, 0.297grams
TO-252
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC
TC=100oC
Pulsed Drain Current(Note 1)
TC=25oC
Power Dissipation
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal resistance(Note 4,5) Junction to Case
Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
-100
+20
-14
-9
-40
60
24
-2.5
-2.0
2.0
1.3
20
-55~150
2.1
62.5
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
July 21,2015-REV.00
Page 1




PJD14P10A pdf, 반도체, 판매, 대치품
PPJD14P10A
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
Fig.10 Capacitance vs. Drain-Source Voltage.
Fig.11 Maximum Safe Operating Area
July 21,2015-REV.00
Page 4

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PJD14P10A 전자부품, 판매, 대치품
PPJD14P10A
PART NO PACKING CODE VERSION
Part No Packing Code
PJD14P10A_L2_00001
Package Type
TO-252
Packing type
3,000pcs / 13reel
Marking
D14P10A
Version
Halogen free
MOUNTING PAD LAYOUT
July 21,2015-REV.00
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부품번호상세설명 및 기능제조사
PJD14P10A

100V P-Channel Enhancement Mode MOSFET

Pan Jit International
Pan Jit International

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