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Número de pieza | PJD50N10AL | |
Descripción | 100V N-Channel Enhancement Mode MOSFET | |
Fabricantes | Pan Jit International | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PJD50N10AL (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PPJD50N10AL
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
42 A
Features
RDS(ON) , VGS@10V, ID@20A<25mΩ
RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ
Advanced Trench Process Technology
High density cell design for ultra low on-resistance
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
TO-252
Case : TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0104 ounces, 0.297grams
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC
TC=100oC
Pulsed Drain Current (Note 1)
TC=25oC
Power Dissipation
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy (Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance(Note 4,5)
Junction to Case
Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
100
+20
42
26
150
83
33
6.3
5.1
2.0
1.3
63.4
-55~150
1.5
62.5
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
July 9,2015-REV.00
Page 1
1 page PPJD50N10AL
TYPICAL CHARACTERISTIC CURVES
Fig.12 Normalized Transient Thermal Impedance vs. Pulse Width
July 9,2015-REV.00
Page 5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet PJD50N10AL.PDF ] |
Número de pieza | Descripción | Fabricantes |
PJD50N10AL | 100V N-Channel Enhancement Mode MOSFET | Pan Jit International |
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