|
|
|
부품번호 | PJQ5463A 기능 |
|
|
기능 | 60V P-Channel Enhancement Mode MOSFET | ||
제조업체 | Pan Jit International | ||
로고 | |||
전체 7 페이지수
PPJQ5463A
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-15 A
DFN5060-8L
Features
RDS(ON), VGS@-10V,ID@-7.5A<68mΩ
RDS(ON), VGS@-4.5V,ID@-4.0A<85mΩ
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: DFN5060-8L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0028 ounces, 0.08 grams
Marking: Q5463A
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC
TC=100oC
Pulsed Drain Current (Note 1)
TC=25oC
Power Dissipation
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy (Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance (Note 4,5) Junction to Case
Junction to Ambient
Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
-60
+20
-15
-9.5
-60
25
10
-4.0
-3.2
2.0
1.3
31
-55~150
5.0
62.5
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
July 21,2015-REV.00
Page 1
PPJQ5463A
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature
Fig.10 Capacitance vs. Drain-Source Voltage
Fig.11 Maximum Safe Operating Area
July 21,2015-REV.00
Page 4
4페이지 PPJQ5463A
Disclaimer
● Reproducing and modifying information of the document is prohibited without permission from Panjit
International Inc..
● Panjit International Inc. reserves the rights to make changes of the content herein the document anytime
without notification. Please refer to our website for the latest document.
● Panjit International Inc. disclaims any and all liability arising out of the application or use of any product
including damages incidentally and consequentially occurred.
● Panjit International Inc. does not assume any and all implied warranties, including warranties of fitness for
particular purpose, non-infringement and merchantability.
● Applications shown on the herein document are examples of standard use and operation. Customers are
responsible in comprehending the suitable use in particular applications. Panjit International Inc. makes no
representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
● The products shown herein are not designed and authorized for equipments requiring high level of reliability or
relating to human life and for any applications concerning life-saving or life-sustaining, such as medical
instruments, transportation equipment, aerospace machinery et cetera. Customers using or selling these
products for use in such applications do so at their own risk and agree to fully indemnify Panjit International
Inc. for any damages resulting from such improper use or sale.
● Since Panjit uses lot number as the tracking base, please provide the lot number for tracking when
complaining.
July 21,2015-REV.00
Page 7
7페이지 | |||
구 성 | 총 7 페이지수 | ||
다운로드 | [ PJQ5463A.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
PJQ5463A | 60V P-Channel Enhancement Mode MOSFET | Pan Jit International |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |