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PTFB091802FC PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 PTFB091802FC
기능 Thermally-Enhanced High Power RF LDMOS FET
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PTFB091802FC 데이터시트, 핀배열, 회로
PTFB091802FC
Thermally-Enhanced High Power RF LDMOS FET
180 W, 28 V, 920 – 960 MHz
Description
The PTFB091802FC LDMOS FET is designed for use in power
amplifier applications in the 920 MHz to 960 MHz frequency band.
Features include high gain and a thermally-enhanced package with
earless flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFB091802FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1400 mA, ƒ = 960 MHz
3GPP WCDMA signal,
PAR = 10.0 dB, 3.84 MHz BW
24
Gain
20
60
40
16 Efficiency
12
20
0
8 PAR @ 0.01% CCDF
4
-20
-40
0
25
-60ptfb091802fc_g1
30 35 40 45 50 55
Average Output Power (dBm)
Features
Broadband internal input and output matching
Dual path design (2 X 90 W)
Typical CW performance at 960 MHz, 28 V
- Ouput power @ P1dB = 206 W
- Efficiency = 56%
- Gain = 18 dB
Capable of handling 10:1 VSWR @ 28 V, 180 W
(CW) output power
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS-compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon production test fixture)
VDD = 28 V, IDQ = 1400 mA, POUT = 55 W avg, ƒ1 =920 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Gain
Drain Efficiency
Adjancent Channel Power Ratio
Gps
hD
ACPR
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Min
18
32
Typ
19.5
34
–35
Max
–33
Unit
dB
%
dBc
Rev. 02.1, 2016-06-10




PTFB091802FC pdf, 반도체, 판매, 대치품
PTFB091802FC
Typical Performance (cont.)
CW Performance Small Signal
Gain & Input Return Loss
VDD = 28 V, IDQ = 1400 mA
20
0
18
Gain
-5
16 -10
IRL
14 -15
12
750
800
850
900
-20ptfb091802fc_g6
950 1000 1050 1100
Frequency (MHz)
Load Pull Performance
Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, IDQ = 1400 mA
P1dB
Max Output Power
Max Drain Efficiency
Freq
[MHz]
Zs
[W]
Zl
Gain POUT POUT
hD
[W]
[dB] [dBm] [W]
[%]
Zl Gain POUT POUT
[W] [dB] [dBm] [W]
920 3.48 – j4.93
1.95 – j1.75
17.2 51.1
127
55.1
4.47 – j0.46
20.2 48.9
77
942 4.17 – j5.32
1.93 – j1.59
18.3 50.4
110
56.0
4.77 + j0.06
20.8 47.8
60
960 4.61 – j5.47
1.86 – j1.64
18.3 50.4
109
56.2
4.23 – j0.33
20.6 48.2
65
hD
[%]
71.0
66.4
66.9
Data Sheet
4 of 9
Rev. 02.1, 2016-06-10

4페이지










PTFB091802FC 전자부품, 판매, 대치품
Pinout Diagram (top view)
S
D1 D2
G1
G2
H-37248-4_pd_10-10-2012
Lead connections for PTFB091802FC
PTFB091802FC
Pin Description
D1 Drain device 1
D2 Drain device 2
G1 Gate device 1
G2 Gate device 2
S Source (flange)
Data Sheet
7 of 9
Rev. 02.1, 2016-06-10

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PTFB091802FC

Thermally-Enhanced High Power RF LDMOS FET

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