|
|
PDF PTVA127002EV Data sheet ( Hoja de datos )
| Número de pieza | PTVA127002EV | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PTVA127002EV (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
PTVA127002EV
Thermally-Enhanced High Power RF LDMOS FET
700 W, 50 V, 1200 – 1400 MHz
Description
The PTVA127002EV LDMOS FET is designed for use in power
amplifier applications in the 1200 to 1400 MHz frequency band.
Features include high gain and thermally-enhanced package with
bolt-down flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTVA127002EV
Package H-36275-4
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 300 mA, TCASE = 25°C,
300 µs pulse width, 12% duty cycle
65
Output Power
55
65
55
45 45
35 35
25 1200 MHz 25
Efficiency
1300 MHz
15
1400 MHz
a127002ev_g1-1
15
30 32 34 36 38 40 42 44 46 48
PIN (dBm)
Features
• Broadband input and output matching
• High gain and efficiency
• Integrated ESD protection
• Low thermal resistance
• Excellent ruggedness
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 700 W peak under RF pulse,
300 µS, 10% duty cycle.
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture)
VDD = 50 V, IDQ = 150 mA per side, POUT = 700 W, ƒ1 = 1200 MHz, ƒ2 = 1300 MHz, ƒ3 = 1400 MHz, 300 µs pulse width,
12% duty cycle
Characteristic
Gain
Drain Efficiency
Gain Flatness
Return Loss
Symbol
Gps
hD
DG
IRL
Min
15.5
50
—
—
Typ
16
56
1.0
–20
Max
—
—
1.3
–11
Unit
dB
%
dB
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03.1, 2015-06-18
1 page  
Typical RF Performance (cont.)
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 300 mA, TCASE = 25°C,
2 ms pulse width, 10% duty cycle
65
55 Output Power
65
55
45 45
35 35
1200 MHz
25
1300 MHz
25
Efficiency
1400 MHz
15
a127002ev_g2-1
15
30 32 34 36 38 40 42 44 46 48
PIN (dBm)
PTVA127002EV
Power Sweep, Pulsed RF
VDD = 50 V, IDQ = 300 mA, TCASE = 25°C,
2 ms pulse width, 10% duty cycle
18
17
16 Gain
15
14 1200 MHz
1300 MHz
1400 MHz
13
a127002ev_g2-2
30 32 34 36 38 40 42 44 46 48
PIN (dBm)
Pulsed RF Performance
VDD = 50 V, IDQ = 300 mA, POUT = 700W,
2 ms pulse width, 10% duty cycle
18 70
17
Gain
65
16
Efficiency
15
60
55
14
1150
1200
1250 1300 1350
Frequency (MHz)
a127002ev_g2-3
50
1400 1450
Pulsed RF Performance
VDD = 50 V, IDQ = 300 mA, POUT = 700 W,
2 ms pulse width,10% duty cycle
-10 0.4
Power Droop
-15 0.3
-20 0.2
IRL
-25 0.1
-30
1150
1200
1250
1300
1350
a127002ev_g2-4
0.0
1400 1450
Frequency (MHz)
Data Sheet
5 of 11
Rev. 03.1, 2015-06-18
5 Page 
PTVA127002EV V1
Revision History
Revision Date
01 2013-10-01
02 2014-03-04
02.1
2014-09-30
03 2014-11-11
Data Sheet Type
Advance
Preliminary
Preliminary
Production
Page
All
All
2
All
03.1
2015-06-18
Production
8
Subjects (major changes since last revision)
Data Sheet reflects advance specification for product development
Data Sheet reflects preliminary specification
Added LTN/PTVA127002EV E5 test fixture
Data Sheet reflects released product specifications
Includes Reference Circuit
Corrected frequency range
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2015-06-18
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 03.1, 2015-06-18
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet PTVA127002EV.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PTVA127002EV | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |