|
|
PDF PXAC182002FC Data sheet ( Hoja de datos )
| Número de pieza | PXAC182002FC | |
| Descripción | Thermally-Enhanced High Power RF LDMOS FET | |
| Fabricantes | Infineon | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PXAC182002FC (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
PXAC182002FC
Thermally-Enhanced High Power RF LDMOS FET
180 W, 28 V, 1805 – 1880 MHz
Description
The PXAC182002FC is a 180-watt LDMOS FET with an asymmetri-
cal design intended for use in multi-standard cellular power amplifier
applications in the 1805 to 1880 MHz frequency band. Features
include dual-path design, input and output matching, high gain and
thermally-enhanced package with earless flanges. Manufactured
with Infineon's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PXAC182002FC
Package H-37248-4
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz,
3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
24
Efficiency
20
60
40
16 20
Gain
12 0
8 PAR @ 0.01% CCDF
4
-20
-40
0
25
c182002fc_g1
-60
30 35 40 45 50 55
Average Output Power (dBm)
Features
• Broadband internal input and output matching
• Asymmetrical Doherty design
- Main: 70 W Typ (P1dB)
- Peak: 110 W Typ (P1dB)
• Typical pulsed CW performance, 1880 MHz, 28 V,
combined outputs
- Output power at P3dB = 194 W
- Efficiency = 64%
- Gain = 14 dB
• Capable of handling 10:1 VSWR @28 V, 110 W
(CW) output power
• Integrated ESD protection
• Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
VDD = 28 V, IDQ = 400 mA, VGSPEAK = 1.1 V, POUT = 28.2 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84
MHz, peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Gain
Drain Efficiency
Adjancent Channel Power Ratio
Gps
hD
ACPR
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Min
15.5
48.5
—
Typ
16.5
51
–30
Max
—
—
–26
Unit
dB
%
dBc
Rev. 02.3, 2016-06-17
1 page  
Reference Circuit , 1805 – 1880 MHz
RO4350, .020
(60)
VGS
RF_IN
R104
C106
C108
R101
S1
R102
R103
C105
R106
C102
C104
C101
VGSPK
C107
C103
R105
PXAC182002FC
RO4350, .020
(61)
C217
VDD
C212 C210
C211
C209 C213
C218
C203
C201
C219
C215
C208
RF_OUT
C204 C202
C207
C206 C216
C205
C214
VDD
PXAC182002FC_IN_01
Reference circuit assembly diagram (not to scale)
PXAC182002FC_OUT_01
c182002fc_CD_03-24-2015
Data Sheet
5 of 8
Rev. 02.3, 2016-06-17
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet PXAC182002FC.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PXAC182002FC | Thermally-Enhanced High Power RF LDMOS FET | Infineon |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |