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PDF BSN048N03LS Data sheet ( Hoja de datos )
| Número de pieza | BSN048N03LS | |
| Descripción | Power-MOSFET | |
| Fabricantes | Infineon | |
| Logotipo |  |
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OptiMOSTM Power-MOSFET
Features
• Optimized for high performance Buck converter
• Very low parasitic inductance
• Low profile (<0.5 mm)
• Double side cooling
• N-channel
• 100% avalanche tested
• Very low on-resistance R DS(on) @ V GS=4.5 V
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Qualified according to JEDEC1) for target applications
Product Summary
VDS
RDS(on),max
ID
QOSS
QG(0V..10V)
BSN048N03LS
30 V
4.8 mW
50 A
8.0 nC
12 nC
LG-USON-6-1
Type
BSN048N03LS
Package
LG-USON-6-1
Marking
048N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current3)
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
I D V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
V GS=4.5 V, T C=25 °C
V GS=4.5 V,
T C=100 °C
I D,pulse
I AS
E AS
V GS
V GS=10 V, T A=25 °C,
R thJA=50 K/W2)
T C=25 °C
T C=25 °C
I D=35 A, R GS=25 W
Rev. 2.0
page 1
Value
50
46
50
39
18
200
35
5
±20
Unit
A
mJ
V
2014-05-23
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
200
10 V
8V 5V
150
4.5 V
100
50
0
012
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
BSN048N03LS
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
3.3 V
2.8 V
3
10
9
3.2 V
8
3.5 V
7
4V
6
4.5 V
5V
5
7V
4
8V
10 V
3
2
1
0
0 10 20 30 40
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
50
240 160
140
120
160
100
80
80
150 °C
25 °C
60
40
20
0
012345
VGS [V]
0
0 20 40 60 80 100
ID [A]
Rev. 2.0
page 5
2014-05-23
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BSN048N03LS.PDF ] | |
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