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DZ1100N22K PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 DZ1100N22K
기능 Rectifier Diode Module
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DZ1100N22K 데이터시트, 핀배열, 회로
Netz-Dioden-Modul
Rectifier Diode Module
Technische Information /
technical information
DZ1100N22K
Key Parameters
VDRM / VRRM
IFAVM
IFSM
vT0
rT
RthJC
Baseplate
Weight
2200 V
1100 A (TC=100°C)
34857000A0 A(TC=55°C)
0,75 V
0,073 mΩ
0,0466 K/W
70 mm
1950 g
Merkmale
Druckkontakt- Technologie für hohe
Verlässlichkeit
Industrie-Standard-Gehäuse
Elektrisch isolierte Grundplatte
Advanced medium power technology
Typische Anwendungen
Gleichrichter für Antriebsapplikationen
Gleichricher für UPS
Batterieladegleichrichter
For type designation please refer to actual
shortform catalog
http://www.ifbip.com/catalog
Features
Pressure contact technology for high reliability
Industial standard package
Electrically insulated baseplate
Advanced medium power technology
Typical Applications
Rectifier for Drives Applications
Rectifiers for UPS
Battery chargers
content of customer DMX code DMX code DMX code
digit digit quantity
serial number
1..7 7
SP material number
8..16
9
datecode (production day)
17..18
2
datecode (production year)
19..20
2
datecode (production month) 21..22
2
vT class
23..26
4
QR class
27..30
4
Date of Publication 2014-04-10
Revision 3.1
www.ifbip.com
support@infineon-bip.com
Seite/page 1/10




DZ1100N22K pdf, 반도체, 판매, 대치품
Netz-Dioden-Modul
Rectifier Diode Module
Technische Information /
technical information
DZ1100N22K
176±1,5
146±1,5
6,5±0,2
80
92±0,2
104±1
2
1
DZ
70±1
21
DZ
Date of Publication 2014-04-10
Revision 3.1
Seite/page 4/10

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DZ1100N22K 전자부품, 판매, 대치품
Netz-Dioden-Modul
Rectifier Diode Module
1800
1600
1400
1200
1000
800
600
400
200
0
0
200 400
Technische Information /
technical information
DZ1100N22K
Θ = 60 rec
180 rec
180 sin
120 rec
DC
600 800 1000 1200 1400 1600 1800 2000
IFAV [A]
Durchlassverlustleistung je Zweig / On-state power loss per arm PFAV = f(IFAV)
Parameter: Stromflußwinkel / Current conduction angle Θ
160
140
120
100
80
60
40
20
0
Θ = 60 rec
180 sin
120 rec 180 rec
DC
200 400 600 800 1000 1200 1400 1600 1800
IFAVM [A]
Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature TC = f(IFAVM)
Strombelastung je Zweig / Current load per arm
Berechungsgrundlage PTAV
Calculation base PTAV
Parameter: Stromflußwinkel Θ / Current conduction angle Θ
2000
Date of Publication 2014-04-10
Revision 3.1
Seite/page 7/10

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링크공유

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관련 데이터시트

부품번호상세설명 및 기능제조사
DZ1100N22K

Rectifier Diode Module

Infineon
Infineon

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