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IDW20G120C5B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 IDW20G120C5B
기능 Silicon Carbide Schottky Diode
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IDW20G120C5B 데이터시트, 핀배열, 회로
Silicon Carbide Schottky Diode
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Final Datasheet
Rev. 2.0 2014-06-10
Industrial Power Control




IDW20G120C5B pdf, 반도체, 판매, 대치품
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Maximum ratings
Parameter
Repetitive peak reverse voltage
Continuous forward current for Rth(j-c,max)
TC = 153°C, D=1
TC = 135°C, D=1
TC = 25°C, D=1
Surge non-repetitive forward current, sine halfwave
TC=25°C, tp=10ms
TC=150°C, tp=10ms
Non-repetitive peak forward current
TC = 25°C, tp=10 µs
i²t value
TC = 25°C, tp=10 ms
TC = 150°C, tp=10 ms
Diode dv/dt ruggedness
VR=0...960 V
Power dissipation for Rth(j-c,max)
TC = 25°C
Operating and storage temperature
Soldering temperature,
wavesoldering only allowed at leads
1.6mm (0.063 in.) from case for 10 s
Mounting torque
M3 and M4 screws
Symbol
VRRM
IF
IF,SM
IF,max
i²dt
dv/dt
Ptot
Tj;Tstg
Tsold
M
Value (leg/device)
1200
10 / 20
14 / 29
31 / 62
95 / 190
90 / 180
887 / 1774
45 / 180
41 / 162
80
125 / 250
-55…175
260
0.7
Unit
V
A
A
A
A²s
V/ns
W
°C
°C
Nm
Thermal Resistances
Parameter
Characteristic
Diode thermal resistance,
junction case
Thermal resistance,
junction ambient
Symbol Conditions
Rth(j-c)
Rth(j-a) leaded
Value (leg/device)
min. typ. max.
Unit
- 0.9/0.45 1.2/0.6 K/W
- - 62 K/W
Final Data Sheet
4 Rev. 2.0, 2014-06-10

4페이지










IDW20G120C5B 전자부품, 판매, 대치품
IDW20G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
60
50
40 Per leg
30
20
10
0
100
400 700
dIF/dt [A/µs]
1000
Figure 5. Typical capacitive charge per leg as
function of current slope1, QC=f(dIF/dt), Tj=150°C
1) guaranteed by design.
1.E-04
1.E-05
Per leg
1.E-06
175 C
1.E-07
1.E-08
150 C
100 C
25 C
-55 C
1.E-09
200 400 600 800 1000 1200
VR [V]
Figure 6. Typical reverse characteristics per leg,
IR=f(VR), parameter: Tj
900
Per leg
1
800 Per leg
700
600
500
0.1
0.01
1E-6
1E-3
tp [s]
D= 0.50
D= 0.20
D= 0.10
D= 0.05
D= 0.02
D= 0.01
Single Pulse
1E0
400
300
200
100
0
0
1 10 100 1000
VR [V]
Figure 7. Max. transient thermal impedance per leg, Figure 8. Typical capacitance per leg as function of
Zth,j-c=f(tP), parameter: D=tP/T
reverse voltage, C=f(VR); Tj=25°C; f=1 MHz
Final Data Sheet
7 Rev. 2.0, 2014-06-10

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IDW20G120C5B

Silicon Carbide Schottky Diode

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