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IGP30N65F5 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 IGP30N65F5
기능 IGBT
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IGP30N65F5 데이터시트, 핀배열, 회로
IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technology
IGP30N65F5
650VIGBThighspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl




IGP30N65F5 pdf, 반도체, 판매, 대치품
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj25°C
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax
VCE
IC
ICpuls
650 V
55.0 A
35.0
90.0 A
Turn off safe operating area
VCE650V,Tvj175°C,tp=1µs
- 90.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp10µs,D<0.010)
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
VGE
Ptot
Tvj
Tstg
±20
±30
188.0
93.0
-40...+175
-55...+150
V
W
°C
°C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6 Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.80 K/W
62 K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
IGES
gfs
VGE=0V,IC=0.20mA
VGE=15.0V,IC=30.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
IC=0.30mA,VCE=VGE
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=30.0A
Value
Unit
min. typ. max.
650 -
-V
-
-
1.60 2.10
1.80 -
V
- 1.90 -
3.2 4.0 4.8 V
- - 40.0 µA
- - 4000.0
- - 100 nA
- 38.0 - S
4 Rev.2.2,2014-12-04

4페이지










IGP30N65F5 전자부품, 판매, 대치품
IGP30N65F5
Highspeedswitchingseriesfifthgeneration
100 200
180
160
10
not for linear use
140
120
100
80
1
60
40
20
0.1
1 10 100 1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj175°C,VGE=15V,tp=1µs.
RecommendeduseatVGE7.5V)
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj175°C)
60 90
80
50
70 VGE=18V
15V
40 60
12V
50 10V
30 8V
40
7V
20 30 6V
5V
20 4V
10
10
0
25 50 75 100 125 150 175
TC,CASETEMPERATURE[°C]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE15V,Tvj175°C)
0
012345
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
7 Rev.2.2,2014-12-04

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IGP30N65F5

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