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PDF IPB120N04S4L-02 Data sheet ( Hoja de datos )
| Número de pieza | IPB120N04S4L-02 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Data Sheet
IPB120N04S4L-02
OptiMOSTM-T2 Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Product Summary
VDS
RDS(on),max
ID
40 V
1.7 mΩ
120 A
PG-TO263-3-2
Type
IPB120N04S4L-02
Package
PG-TO263-3-
Marking
4N04L02
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current1)
Symbol
Conditions
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2)
I D,pulse T C=25°C
Avalanche energy, single pulse2) E AS I D=60A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25°C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
120
120
480
480
120
+20/-16
158
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2013-06-03
1 page  
Data Sheet
IPB120N04S4L-02
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
480
10 V
420
4.5 V
360
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
11
3V
3.5 V
4V
4V 9
300
7
240
3.5 V
180 5
120
60
0
012
VDS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
480
-55 °C
420
360
3
3V
1
34
0 120 240 360
ID [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
25 °C
175 °C
3
2.5
4.5 V
10 V
480
300
2
240
180 1.5
120
1
60
0
1 2 3 4 5 0.5
-60 -20 20 60 100 140 180
VGS [V]
Tj [°C]
Rev. 1.0
page 5
2013-06-03
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPB120N04S4L-02.PDF ] | |
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