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PDF IPB180N04S4L-01 Data sheet ( Hoja de datos )
| Número de pieza | IPB180N04S4L-01 | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Data Sheet
IPB180N04S4L-01
OptiMOSTM-T2 Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Product Summary
VDS
RDS(on)
ID
40 V
1.2 mΩ
180 A
PG-TO263-7-3
Type
IPB180N04S4L-01
Package
PG-TO263-7-3
Marking
4N04L01
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25°C, V GS=10V1)
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=90 A
Avalanche current, single pulse
I AS -
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
180
180
720
550
180
+20/-16
188
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.0
page 1
2013-06-03
1 page  
Data Sheet
IPB180N04S4L-01
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
10 V
600
4.5 V
500
400
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
14
3V
3.5 V
12
4V
4V
10
8
300
6
3.5 V
200 4
100 2
3V
0 10 V
012345
VDS [V]
0
0 180 360 540
ID [A]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; V GS = 10 V
720
630
-55 °C
25 °C
175 °C
2
1.75
540
1.5
450
4.5 V
10 V
720
360 1.25
270
180
90
0
1
234
VGS [V]
1
0.75
0.5
5 -60 -20 20 60 100 140 180
Tj [°C]
Rev. 1.0
page 5
2013-06-03
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPB180N04S4L-01.PDF ] | |
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