Datasheet.kr   

IPW60R125P6 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 IPW60R125P6
기능 MOSFET
제조업체 Infineon
로고 Infineon 로고 


전체 18 페이지

		

No Preview Available !

IPW60R125P6 데이터시트, 핀배열, 회로
MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™P6
600VCoolMOS™P6PowerTransistor
IPx60R125P6
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket




IPW60R125P6 pdf, 반도체, 판매, 대치품
600VCoolMOS™P6PowerTransistor
IPW60R125P6,IPP60R125P6,IPA60R125P6
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current 1)
Pulsed drain current 2)
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation (Non FullPAK)
TO-220, TO-247
Power dissipation (FullPAK)
TO-220FP
Storage temperature
Operating junction temperature
Mounting torque (Non FullPAK)
TO-220, TO-247
Mounting torque (FullPAK)
TO-220FP
Continuous diode forward current
Diode pulse current2)
Reverse diode dv/dt 3)
ID
ID,pulse
EAS
EAR
IAR
dv/dt
VGS
VGS
Ptot
Ptot
Tstg
Tj
-
-
IS
IS,pulse
dv/dt
Maximum diode commutation speed
Insulation withstand voltage for
TO-220FP
dif/dt
VISO
Min.
-
-
-
-
-
-
-
-20
-30
-
Values
Typ. Max.
- 30.0
- 19.0
- 87
- 636
- 0.96
- 5.2
- 100
- 20
- 30
- 219
Unit Note/TestCondition
A
TC=25°C
TC=100°C
A TC=25°C
mJ ID=5.2A; VDD=50V; see table 10
mJ ID=5.2A; VDD=50V; see table 10
A-
V/ns VDS=0...400V
V static;
V AC (f>1 Hz)
W TC=25°C
--
-55 -
-55 -
--
34 W TC=25°C
150 °C -
150 °C -
60 Ncm M3 and M3.5 screws
- - 50 Ncm M2.5 screws
- - 26.0 A TC=25°C
- - 87 A TC=25°C
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
-
-
300
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 8
-
-
2500 V
Vrms,TC=25°C,t=1min
1) Limited by Tj max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
3)IdenticallowsideandhighsideswitchwithidenticalRG
Final Data Sheet
4
Rev.2.0,2014-03-07

4페이지










IPW60R125P6 전자부품, 판매, 대치품
600VCoolMOS™P6PowerTransistor
IPW60R125P6,IPP60R125P6,IPA60R125P6
Table8Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Reverse recovery time
VSD
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Min.
-
-
-
-
Values
Typ. Max.
0.9 -
385 -
7-
32 -
Unit Note/TestCondition
V VGS=0V,IF=14.5A,Tj=25°C
ns
VR=400V,IF=14.5A,diF/dt=100A/µs;
see table 8
µC
VR=400V,IF=14.5A,diF/dt=100A/µs;
see table 8
A
VR=400V,IF=14.5A,diF/dt=100A/µs;
see table 8
Final Data Sheet
7 Rev.2.0,2014-03-07

7페이지



구       성총 18 페이지
다운로드[ IPW60R125P6.PDF 데이터시트 ]
구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

휴대전화 : 010-3582-2743


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877, [ 홈페이지 ]



링크공유

링크 :

관련 데이터시트

부품번호상세설명 및 기능제조사
IPW60R125P6

MOSFET

Infineon
Infineon

추천 데이터시트

부품번호상세설명 및 기능제조사
CQ1565RT

FSCQ1565RT, Green Mode Fairchild Power Switch. In general, a Quasi-Resonant Converter (QRC) shows lower EMI and higher power conversion efficiency compared to conventional hard-switched converter with a fixed switching frequency.

Fairchild
Fairchild
KF16N25D

MOSFET의 기능은 N Channel MOS Field effect transistor입니다. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.( Vdss=250V, Id=13A )

KEC
KEC

DataSheet.kr    |   2018   |  연락처   |  링크모음   |   검색  |   사이트맵