|
|
PDF MGSF3442XT1 Data sheet ( Hoja de datos )
| Número de pieza | MGSF3442XT1 | |
| Descripción | Small-Signal MOSFETs Single N-Channel Field Effect Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de MGSF3442XT1 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
|
No Preview Available !
MGSF3442XT1
Preliminary Information
Low RDS(on) Small-Signal
MOSFETs Single N-Channel
Field Effect Transistors
These miniature surface mount MOSFETs utilize the High Cell
Density, HDTMOS process. Low rDS(on) assures minimal power loss
and conserves energy, making this device ideal for use in small power
management circuitry. Typical applications are dc−dc converters,
power management in portable and battery−powered products such as
computers, printers, PCMCIA cards, cellular and cordless telephones.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature TSOP 6 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C
Drain Current − Pulsed Drain Current (tp ≤
10 μs)
VDSS
VGS
ID
IDM
20
± 8.0
1.7
20
Vdc
Vdc
A
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature Range
PD
TJ, Tstg
400
− 55 to
150
mW
°C
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
RθJA
TL
300 °C/W
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Reel Size
MGSF3442XT1
7″
MGSF3442XT3
13″
Tape Width
8 mm embossed tape
8 mm embossed tape
Quantity
3000
10,000
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
N−CHANNEL
ENHANCEMENT−MODE
MOSFET
RDS(on) = 58 mΩ (TYP)
DD S
DDG
CASE 318G−02, Style 1
TSOP 6 PLASTIC
1256
DRAIN
3
GATE
SOURCE
4
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 2
1
Publication Order Number:
MGSF3442XT1/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MGSF3442XT1.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| MGSF3442XT1 | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |  Motorola Semiconductors |
| MGSF3442XT1 | Small-Signal MOSFETs Single N-Channel Field Effect Transistors | ON Semiconductor |
| MGSF3442XT3 | Small-Signal MOSFETs Single N-Channel Field Effect Transistors | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |