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PDF MMSF3350 Data sheet ( Hoja de datos )
| Número de pieza | MMSF3350 | |
| Descripción | Single N-Channel Field Effect Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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MMSF3350
WaveFET™ HDTMOS™
Single N−Channel Field
Effect Transistor
Power Surface Mount Products
WaveFET devices are an advanced series of power MOSFETs
which utilize ON Semiconductor’s latest MOSFET technology
process to achieve the lowest possible on−resistance per silicon area.
They are capable of withstanding high energy in the avalanche and
commutation modes and the drain−to−source diode has a very low
reverse recovery time. WaveFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
• Characterized Over a Wide Range of Power Ratings
• Ultralow RDS(on) Provides Higher Efficiency and
Extends Battery Life in Portable Applications
• Logic Level Gate Drive − Can Be Driven by
Logic ICs
• Diode Is Characterized for Use In Bridge Circuits
• Diode Exhibits High Speed, With Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Miniature SO−8 Surface Mount Package − Saves Board Space
http://onsemi.com
SINGLE TMOS
POWER MOSFET
30 VOLTS
RDS(on) = 11 mW
D
G
S
SO−8
CASE 751
Style 12
MARKING
DIAGRAM
8
XXXXXX
ALYW
1
XXX
A
L
Y
W
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 3
1
Publication Order Number:
MMSF3350/D
1 page  
MMSF3350
POWER MOSFET SWITCHING
Switching behavior is most easily modeled and predicted
by recognizing that the power MOSFET is charge
controlled. The lengths of various switching intervals (Dt)
are determined by how fast the FET input capacitance can
be charged by current from the generator.
The published capacitance data is difficult to use for
calculating rise and fall because drain−gate capacitance
varies greatly with applied voltage. Accordingly, gate
charge data is used. In most cases, a satisfactory estimate of
average input current (IG(AV)) can be made from a
rudimentary analysis of the drive circuit so that
t = Q/IG(AV)
During the rise and fall time interval when switching a
resistive load, VGS remains virtually constant at a level
known as the plateau voltage, VSGP. Therefore, rise and fall
times may be approximated by the following:
tr = Q2 x RG/(VGG − VGSP)
tf = Q2 x RG/VGSP
where
VGG = the gate drive voltage, which varies from zero to VGG
RG = the gate drive resistance
and Q2 and VGSP are read from the gate charge curve.
During the turn−on and turn−off delay times, gate current
is not constant. The simplest calculation uses appropriate
values from the capacitance curves in a standard equation for
voltage change in an RC network. The equations are:
td(on) = RG Ciss In [VGG/(VGG − VGSP)]
td(off) = RG Ciss In (VGG/VGSP)
The capacitance (Ciss) is read from the capacitance curve
at a voltage corresponding to the off−state condition when
calculating td(on) and is read at a voltage corresponding to the
on−state when calculating td(off).
At high switching speeds, parasitic circuit elements
complicate the analysis. The inductance of the MOSFET
source lead, inside the package and in the circuit wiring
which is common to both the drain and gate current paths,
produces a voltage at the source which reduces the gate drive
current. The voltage is determined by Ldi/dt, but since di/dt
is a function of drain current, the mathematical solution is
complex. The MOSFET output capacitance also
complicates the mathematics. And finally, MOSFETs have
finite internal gate resistance which effectively adds to the
resistance of the driving source, but the internal resistance
is difficult to measure and, consequently, is not specified.
The resistive switching time variation versus gate
resistance (Figure 9) shows how typical switching
performance is affected by the parasitic circuit elements. If
the parasitics were not present, the slope of the curves would
maintain a value of unity regardless of the switching speed.
The circuit used to obtain the data is constructed to minimize
common inductance in the drain and gate circuit loops and
is believed readily achievable with board mounted
components. Most power electronic loads are inductive; the
data in the figure is taken with a resistive load, which
approximates an optimally snubbed inductive load. Power
MOSFETs may be safely operated into an inductive load;
however, snubbing reduces switching losses.
4000
3500
3000
2500
Ciss
VDS = 0 V
Crss
VGS = 0 V
TJ = 25°C
2000
1500
Ciss
1000
500
Crss
Coss
0
−10 −5
0
5
VGS VDS
10 15 20 25 30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
http://onsemi.com
5
5 Page 
MMSF3350
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones and
a figure for belt speed. Taken together, these control settings
make up a heating “profile” for that particular circuit board.
On machines controlled by a computer, the computer
remembers these profiles from one operating session to the
next. Figure 1 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems, but it is a
good starting point. Factors that can affect the profile
include the type of soldering system in use, density and types
of components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow
soldering system was used to generate this profile. The type
of solder used was 62/36/2 Tin Lead Silver with a melting
point between 177−189°C. When this type of furnace is used
for solder reflow work, the circuit boards and solder joints
tend to heat first. The components on the board are then
heated by conduction. The circuit board, because it has a
large surface area, absorbs the thermal energy more
efficiently, then distributes this energy to the components.
Because of this effect, the main body of a component may
be up to 30 degrees cooler than the adjacent solder joints.
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2 STEP 3
STEP 4
STEP 5
VENT HEATING HEATING
HEATING
“SOAK” ZONES 2 & 5 ZONES 3 & 6 ZONES 4 & 7
“RAMP”
“SOAK”
“SPIKE”
200°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
160°C
170°C
STEP 6 STEP 7
VENT COOLING
205° TO 219°C
PEAK AT
SOLDER JOINT
150°C
100°C
150°C
100°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
140°C(DEPENDING ON
MASS OF ASSEMBLY)
50°C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 18. Typical Solder Heating Profile
DEVICE MARKING
S3350
ORDERING INFORMATION
Device
MMSF3350R2
Reel Size
13″
Tape Width
12 mm embossed tape
Quantity
2500 units
http://onsemi.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet MMSF3350.PDF ] | |
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