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PDF MPF930 Data sheet ( Hoja de datos )
| Número de pieza | MPF930 | |
| Descripción | TMOS Switching | |
| Fabricantes | ON Semiconductor | |
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Hay una vista previa y un enlace de descarga de MPF930 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MPF930
TMOS Switching
N−Channel — Enhancement
MAXIMUM RATINGS
Rating
Drain −Source Voltage
Drain −Gate Voltage
Gate−Source Voltage
— Continuous
— Non−repetitive
(tp ≤ 50 μs)
Drain Current
Continuous(1)
Pulsed(2)
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Symbol
VDS
VDG
VGS
VGSM
ID
IDM
PD
MPF930
35
35
MPF960
60
60
± 20
± 40
2.0
3.0
1.0
8.0
MPF990
90
90
Unit
Vdc
Vdc
Vdc
Vpk
Adc
W
mW/°C
http://onsemi.com
CASE 29−05, STYLE 22
TO−92 (TO−226AE)
1
23
3 DRAIN
Operating and Storage
Junction
Temperature Range
TJ, Tstg
−55 to 150
°C
2
GATE
Thermal Resistance
θJA
125 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
1 SOURCE
Typ Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 10 μAdc)
MPF930
MPF960
MPF990
V(BR)DSX
Vdc
35 — —
60 — —
90 — —
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
Zero−Gate−Voltage Drain Current
(VDS = Maximum Rating, VGS = 0)
Gate Threshold Voltage
(ID = 1.0 mAdc, VDS = VGS)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 0.5 Adc)
(ID = 1.0 Adc)
(ID = 2.0 Adc)
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
MPF930
MPF960
MPF990
IGSS — — 50 nAdc
IDSS — — 10 μAdc
VGS(Th)
1.0
—
3.5 Vdc
VDS(on)
—
—
—
—
—
—
—
—
—
Vdc
0.4 0.7
0.6 0.8
0.6 1.2
0.9 1.4
1.2 1.7
1.2 2.4
2.2 3.0
2.8 3.5
2.8 4.8
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
Publication Order Number:
MPF930/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MPF930.PDF ] | |
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