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PDF 1SS250 Data sheet ( Hoja de datos )
| Número de pieza | 1SS250 | |
| Descripción | SILICON EPITAXIAL PLANAR DIODE | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS250
Ultra High Speed Switching Application
1SS250
Unit: mm
z Low forward voltage
: VF (2) = 0.90V (typ.)
z Fast reverse recovery time : trr = 60ns (max)
z Small total capacitance : CT = 1.5pF (typ.)
z Small package
: SC−59
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Peak reverse voltage
VRM
250 V
Reverse voltage
VR 200 V
Peak forward current
IFM 300 mA
Average forward current
IO 100 mA
Surge current (10 ms)
IFSM
2A
Power dissipation
P 150 mW
Junction temperature
Storage temperature range
Tj 125 °C JEDEC
Tstg −55 to 125 °C JEITA
−
SC−59
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1−3G1B
Weight: 0.012g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
IR (1)
IR (2)
CT
trr
Test
Circuit
Test Condition
― IF = 10mA
― IF = 100mA
― VR = 50V
― VR = 200V
― VR = 0, f = 1MHz
― IF = 10mA (Fig.1)
Min Typ. Max Unit
― 0.72 1.00
V
― 0.90 1.20
― ― 0.1
μA
― ― 1.0
― 1.5 3.0 pF
― 10 60 ns
Fig.1 Reverse recovery time (trr) test circuit
Marking
Start of commercial production
1984-05
1 2014-03-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS250.PDF ] | |
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