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PDF NSM3005NZ Data sheet ( Hoja de datos )
| Número de pieza | NSM3005NZ | |
| Descripción | Small Signal BJT and MOSFET | |
| Fabricantes | ON Semiconductor | |
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NSM3005NZ
Small Signal BJT and
MOSFET
30 V, 500 mA, PNP BJT with 20 V, 224 mA,
N−Channel MOSFET
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Portable Devices
Q1 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Base Current
VCEO
VCBO
VEBO
IC
IB
30
40
5.0
500
50
Unit
V
V
V
mA
mA
Q2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t≤5s
Pulsed Drain Current
Source Current (Body Diode)
TA = 25°C
TA = 85°C
TA = 25°C
Tp = 10 ms
VDSS
VGS
ID
IDM
IS
20
±8
224
162
241
673
120
Unit
V
V
mA
mA
mA
THERMAL CHARACTERISTICS
Parameter
Symbol Value Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Operating Junction and Storage
Temperature
RqJA
PD
TJ, TSTG
245
0.8
−55 to
150
°C/W
W
°C
Lead Temperature for Soldering Purposes TL 260 °C
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
www.onsemi.com
6
1
UDFN6
CASE 517AT
mCOOLt
MARKING DIAGRAM
1
XX MG
G
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
PIN CONNECTIONS
ORDERING INFORMATION
Device
NSS3005NZTAG
Package
UDFN6
(Pb−Free)
Shipping†
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
January, 2016 − Rev. 1
1
Publication Order Number:
NSM3005NZ/D
1 page  
NSM3005NZ
TYPICAL CHARACTERISTICS − Q2
30
25
20 Ciss
15
VGS = 0 V
TJ = 25°C
f = 1 MHz
10
Coss
5
Crss
0
0 2 4 6 8 10 12 14 16 18
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Capacitance Variation
20
1000
100
td(off)
tf
VGS = 4.5 V
VDD = 15 V
tr
td(on)
5
QT
18
4
VDS
3
VGS
15
12
9
2
QGS
1
QGD
VDS = 15 V
TJ = 25°C
ID = 0.2 A
6
3
00
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
QG, TOTAL GATE CHARGE (nC)
Figure 14. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
TJ = 25°C
TJ = 125°C
1
TJ = −55°C
0.1
10
1 10 100
RG, GATE RESISTANCE (W)
Figure 15. Resistive Switching Time Variation
vs. Gate Resistance
0.85
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 16. Diode Forward Voltage vs. Current
0.75
0.65
ID = 250 mA
0.55
0.45
0.35
−50
−25 0 25 50 75 100 125
TJ, TEMPERATURE (°C)
Figure 17. Threshold Voltage
150
www.onsemi.com
5
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| PDF Descargar | [ Datasheet NSM3005NZ.PDF ] | |
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