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PDF NTLUS4C16N Data sheet ( Hoja de datos )
| Número de pieza | NTLUS4C16N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTLUS4C16N
Power MOSFET
30 V, 11.7 A, Single N−Channel,
1.6x1.6x0.55 mm mCoolt UDFN6 Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
• Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
• Ultra Low RDS(on)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Power Load Switch
• Wireless Charging
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipa-
tion (Note 1)
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
30
±12
9.4
6.8
11.7
1.53
V
V
A
W
t ≤ 5 s TA = 25°C
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
TA = 85°C
Power Dissipation (Note 2)
TA = 25°C
Pulsed Drain Current
tp = 10 ms
MOSFET Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
ID
PD
IDM
TJ,
TSTG
IS
TL
2.37
6.1
4.4
0.65
28
-55 to
150
2.0
260
A
W
A
°C
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size,
2 oz. Cu.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 0
1
www.onsemi.com
V(BR)DSS
30 V
MOSFET
RDS(on) MAX
11.4 mW @ 10 V
13.3 mW @ 4.5 V
14.2 mW @ 3.7 V
15.2 mW @ 3.3 V
20 mW @ 2.5 V
40 mW @ 1.8 V
D
ID MAX
11.7 A
G
S
N−CHANNEL MOSFET
S
D
Pin 1
MARKING DIAGRAM
UDFN6
1
(mCOOL])
AHMG
CASE 517AU
G
AH = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
D1
D2
6D
D
5D
G3
S
(Top View)
4S
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
Publication Order Number:
NTLUS4C16N/D
1 page  
NTLUS4C16N
TYPICAL CHARACTERISTICS
1000
Ciss
Coss
8
7
6
5
QT
30
25
20
100 4 15
3 Qgs Qgd
10
Crss
2
TJ = 25°C
VGS = 0 V
TJ = 25°C
5
1 VDS = 15 V
f = 1 MHz
10
ID = 5 A
00
0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 11 12
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000.0
100.0
VDD = 15 V
ID = 15 A
VGS = 4.5 V
10.0
td(off)
tf
tr
td(on)
2.0
1.8
VGS = 0 V
1.6
1.4
1.2
1.0
0.8
0.6
TJ = 25°C
TJ = 125°C
1.0
1
10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.4
0.2
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100
1.80
10
10 ms
1.60
1.40
ID = 250 mA
100 ms
1.20
1
VGS < 10 V
TA = 25°C
Single Pulse Response
0.1
RDS(on) Limit
Thermal Limit
1 ms
10 ms
dc
0.01
0.1
Package Limit
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100
1.00
0.80
0.60
0.40
0.20
0.00
−50
−25 0 25 50 75 100 125 150
TJ, TEMPERATURE (°C)
Figure 12. VGS(th) vs. Temperature
175
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