|
|
|
부품번호 | NTMFS6B03N 기능 |
|
|
기능 | Power MOSFET ( Transistor ) | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 6 페이지수
NTMFS6B03N
Power MOSFET
100 V, 4.8 mW, 132 A, Single N−Channel
Features
• Small Footprint (5x6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 2, 3)
Power Dissipation
RqJC (Notes 1, 2)
Steady
State
TC = 25°C
TC = 100°C
TC = 25°C
TC = 100°C
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
100
±20
132
83
165
65
19
12
3.4
1.4
470
−55 to
+ 150
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 60 A)
IS 160 A
EAS 180 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol Value Unit
Junction−to−Case − Steady State
RqJC
0.76 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA
38
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
www.onsemi.com
V(BR)DSS
100 V
RDS(ON) MAX
4.8 mW @ 10 V
ID MAX
132 A
D (5)
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
MARKING
DIAGRAM
D
S
S 6B03N
S AYWZZ
G
D
D
D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
February, 2015 − Rev. 1
1
Publication Order Number:
NTMFS6B03N/D
NTMFS6B03N
TYPICAL CHARACTERISTICS
10,000
1000
Ciss
Coss
Crss
100
12
10
8
6 Qgs
QT
Qgd
VGS = 0 V
10 TJ = 25°C
f = 1 MHz
1
1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
VDS = 50 V
ID = 50 A
VGS = 10 V
100
tr
td(off)
td(on)
10 tf
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
4
TJ = 25°C
2 VDS = 50 V
ID = 50 A
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
200
180 TJ = 25°C
160
140
120
100
80
60
40
20
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
100
VGS ≤ 10 V
Single Pulse
TC = 25°C
10
500 ms
1 1 ms
0.1
0.01
0.1
RDS(on) Limit
Thermal Limit
Package Limit
1 10
10 ms
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
www.onsemi.com
4
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ NTMFS6B03N.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NTMFS6B03N | Power MOSFET ( Transistor ) | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |