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NTNS3193NZ PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 NTNS3193NZ
기능 Small Signal MOSFET
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NTNS3193NZ 데이터시트, 핀배열, 회로
NTNS3193NZ
Small Signal MOSFET
20 V, 224 mA, Single NChannel,
0.62 x 0.62 x 0.4 mm XLLGA3 Package
Features
Single NChannel MOSFET
Ultra Small and Thin Package (0.62 x 0.62 x 0.4 mm)
Low RDS(on) Solution in 0.62 x 0.62 mm Package
1.5 V Gate Voltage Rating
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Small Signal Load Switch
Analog Switch
High Speed Interfacing
Optimized for Power Management in Ultra Portable Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipa-
tion (Note 1)
t5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
20 V
±8.0 V
224 mA
162
241
120 mW
t 5 s TA = 25°C
139
Pulsed Drain Current
tp = 10 ms
IDM
673 mA
Operating Junction and Storage
Temperature
TJ,
TSTG
-55 to
150
°C
Source Current (Body Diode)
IS 120 mA
Lead Temperature for Soldering Purposes TL 260 °C
(1/8from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction-to-Ambient – Steady State (Note 1)
RθJA
1040 °C/W
Junction-to-Ambient – t 5 s (Note 1)
RθJA
900
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
(or 2 mm2), 1 oz Cu.
2. Pulse Test: pulse width 300 ms, duty cycle 2%.
http://onsemi.com
V(BR)DSS
20 V
MOSFET
RDS(on) MAX
1.4 W @ 4.5 V
1.9 W @ 2.5 V
2.2 W @ 1.8 V
4.3 W @ 1.5 V
ID MAX
224 mA
NChannel MOSFET
D (3)
G (1)
S (2)
MARKING
DIAGRAM
3
2
1
XLLGA3
CASE 713AB
1
AM
A = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
NTNS3193NZT5G
Package
XLLGA3
(PbFree)
Shipping
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 1
1
Publication Order Number:
NTNS3193NZ/D




NTNS3193NZ pdf, 반도체, 판매, 대치품
NTNS3193NZ
TYPICAL CHARACTERISTICS
30
25
20 Ciss
15
VGS = 0 V
TJ = 25°C
f = 1 MHz
10
Coss
5
Crss
0
0 2 4 6 8 10 12 14 16 18
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
20
1000
100
td(off)
tf
VGS = 4.5 V
VDD = 15 V
tr
td(on)
5 QT
18
4
VDS
3
15
VGS
12
9
2
QGS
1
QGD
VDS = 15 V
TJ = 25°C
ID = 0.2 A
6
3
00
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
QG, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource and
DraintoSource Voltage vs. Total Charge
10
TJ = 25°C
TJ = 125°C
1
TJ = 55°C
0.1
10
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD, SOURCETODRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
0.85 1
10 ms
0.75
0.65
0.55
0.45
ID = 250 mA
0.1
0.01
VGS 8 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
1 ms
10 ms
dc
0.35
50 25
0
0.001
25 50 75 100 125 150
0.1
1
10 100
TJ, TEMPERATURE (°C)
Figure 11. Threshold Voltage
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 12. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
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부품번호상세설명 및 기능제조사
NTNS3193NZ

Small Signal MOSFET

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