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PDF NTNS3C68NZ Data sheet ( Hoja de datos )
| Número de pieza | NTNS3C68NZ | |
| Descripción | Small Signal MOSFET | |
| Fabricantes | ON Semiconductor | |
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NTNS3C68NZ
Product Preview
Small Signal MOSFET
12 V, 758 mA, Single N−Channel SOT−883
(XDFN3) 1.0 x 0.6 x 0.4 mm Package
Features
• Single N−Channel MOSFET
• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for
Extremely Thin Environments such as Portable Electronics
• Low RDS(on) Solution in Ultra Small 1.0 x 0.6 mm Package
• 1.5 V Gate Drive
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Side Switch
• High Speed Interfacing
• Level Shift and Translate
• Optimized for Power Management in Ultra Portable Solutions
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Steady
Current (Note 1)
State
Power Dissipa-
tion (Note 1)
t≤5s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
12 V
±10 V
758 mA
547
898
156 mW
t ≤ 5 s TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IDM
TJ,
TSTG
IS
TL
219
TBD
-55 to
150
TBD
260
mA
°C
mA
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Units
Junction-to-Ambient – Steady State (Note 1)
RθJA
800 °C/W
Junction-to-Ambient – t ≤ 5 s (Note 1)
RθJA
570
1. Surface Mounted on FR4 Board using the minimum recommended pad size,
(or 2 mm2), 1 oz Cu.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. P1
1
www.onsemi.com
V(BR)DSS
12 V
MOSFET
RDS(on) MAX
0.160 W @ 4.5 V
0.173 W @ 3.7 V
0.182 W @ 3.3 V
0.220 W @ 2.5 V
0.440 W @ 1.8 V
ID MAX
758 mA
N−Channel MOSFET
D (3)
G (1)
S (2)
3
21
SOT−883
(XDFN3)
CASE 506CB
MARKING
DIAGRAM
XX M
XX = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
NTNS3C68NZT5G
Package
SOT−883
(Pb−Free)
Shipping†
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTNS3C68NZ/D
1 page | ||
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