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PDF 1SS293 Data sheet ( Hoja de datos )
| Número de pieza | 1SS293 | |
| Descripción | DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type
1SS293
Low Voltage High Speed Switching
Low forward voltage
Low reverse surrent
Small package
: VF (3) = 0.54V (typ.)
: IR = 5µA (max)
1SS293
Unit in mm
Maximum Ratings (Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Power dissipation
Junction temperature
Storage temperature range
Symbol
VRM
VR
IFM
IO
P
Tj
Tstg
Rating
Unit
45 V
40 V
300 mA
100 mA
300 mW
JEDEC
125 °C EIAJ
−55~125 °C TOSHIBA
Weight: 0.13g
―
SC−61
2−3J1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 40V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.54 0.60
― ― 5 µA
― 18 25 pF
961001EAA2
• TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in
general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of
the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure
of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please
ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications.
Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook.
2000-09-11 1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1SS293.PDF ] | |
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