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PDF 1SS294 Data sheet ( Hoja de datos )
| Número de pieza | 1SS294 | |
| Descripción | DIODE (LOW VOLTAGE HIGH SPEED SWITCHING) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS294
Low Voltage High Speed Switching
z Low forward voltage
z Low reverse surrent
z Small package
: VF (3) = 0.54V (typ.)
: IR = 5μA (max)
: SC−59
1SS294
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
45 V
Reverse voltage
VR 40 V
Maximum (peak) forward current
IFM
300 mA
Average forward current
IO 100 mA
Power dissipation
P 150 mW
Junction temperature
Storage temperature range
Tj
125 °C JEDEC
TO−236MOD
Tstg
−55~125
°C
JEITA
TOSHIBA
SC−59
1−3G1B
Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.012g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 40V
― VR = 0, f = 1MHz
Min Typ. Max Unit
― 0.28 ―
― 0.36 ―
V
― 0.54 0.60
― ― 5 μA
― 18 25 pF
Marking
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 1SS294.PDF ] | |
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