Datasheet.kr   

BZT52H-B4V7 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BZT52H-B4V7은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

PDF 형식의 BZT52H-B4V7 자료 제공

부품번호 BZT52H-B4V7 기능
기능 Single Zener diodes
제조업체 NXP Semiconductors
로고 NXP Semiconductors 로고


BZT52H-B4V7 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 13 페이지수

미리보기를 사용할 수 없습니다

BZT52H-B4V7 데이터시트, 핀배열, 회로
BZT52H series
Single Zener diodes in a SOD123F package
Rev. 3 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
„ Total power dissipation: 830 mW
„ Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
„ Small plastic package suitable for
surface-mounted design
„ Low differential resistance
„ AEC-Q101 qualified
1.3 Applications
„ General regulation functions
1.4 Quick reference data
Table 1.
Symbol
VF
Ptot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
IF = 10 mA
Tamb 25 °C
Min Typ Max Unit
[1] - - 0.9 V
[2] - - 375 mW
[3] - - 830 mW
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
Simplified outline
[1]
12
Graphic symbol
12
006aaa152




BZT52H-B4V7 pdf, 반도체, 판매, 대치품
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 10 mA
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
Min Typ Max Unit
[1] - - 0.9 V
Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24
Tj = 25 °C unless otherwise specified.
BZT52H Sel
-xxx
Working
voltage
VZ (V);
IZ = 5 mA
Maximum differential Reverse
resistance rdif (Ω)
current IR (μA)
Min Max IZ = 1 mA IZ = 5 mA Max VR (V)
2V4 B 2.35 2.45 400
85
50 1
Temperature
coefficient
SZ (mV/K);
IZ = 5 mA
Min Max
3.5 0.0
C 2.2 2.6
2V7 B 2.65 2.75 500
83
20 1
3.5 0.0
C 2.5 2.9
3V0 B 2.94 3.06 500
95
10 1
3.5 0.0
C 2.8 3.2
3V3 B 3.23 3.37 500
95
5 1 3.5 0.0
C 3.1 3.5
3V6 B 3.53 3.67 500
95
5 1 3.5 0.0
C 3.4 3.8
3V9 B 3.82 3.98 500
95
3 1 3.5 0.0
C 3.7 4.1
4V3 B 4.21 4.39 500
95
3 1 3.5 0.0
C 4.0 4.6
4V7 B 4.61 4.79 500
78
3 2 3.5 0.2
C 4.4 5.0
5V1 B 5.0 5.2 480
60
2 2 2.7 1.2
C 4.8 5.4
5V6 B 5.49 5.71 400
40
1 2 2.0 2.5
C 5.2 6.0
6V2 B 6.08 6.32 150
10
3 4 0.4 3.7
C 5.8 6.6
6V8 B 6.66 6.94 80
8
2 4 1.2 4.5
C 6.4 7.2
7V5 B 7.35 7.65 80 10 1 5 2.5 5.3
C 7.0 7.9
8V2 B 8.04 8.36 80
10
0.7 5
3.2 6.2
C 7.7 8.7
Diode
capacitance
Cd (pF)[1]
Max
Non-repetitive
peak reverse
current
IZSM (A)[2]
Max
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
300 6.0
300 6.0
300 6.0
200 6.0
200 6.0
150 4.0
150 4.0
BZT52H_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
4 of 13

4페이지










BZT52H-B4V7 전자부품, 판매, 대치품
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
103
PZSM
(W)
102
mbg801
300
IF
(mA)
200
mbg781
(1)
10
(2)
100
1
101
1 10
tp (ms)
0
0.6 0.8
1
VF (V)
(1) Tj = 25 °C (prior to surge)
(2) Tj = 150 °C (prior to surge)
Fig 1.
Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Tj = 25 °C
Fig 2. Forward current as a function of forward
voltage; typical values
0
SZ
(mV/K)
1
mbg783
4V3
3V9
3V6
2
3
0
3V3
3V0
2V4
2V7
20 40 IZ (mA) 60
Fig 3.
BZT52H-B/C2V4 to BZT52H-B/C4V3
Tj = 25 °C to 150 °C
Temperature coefficient as a function of
working current; typical values
10
SZ
(mV/K)
5
0
mbg782
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
4V7
5
0 4 8 12 16 20
IZ (mA)
Fig 4.
BZT52H-B/C4V7 to BZT52H-B/C12
Tj = 25 °C to 150 °C
Temperature coefficient as a function of
working current; typical values
BZT52H_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
7 of 13

7페이지


구       성 총 13 페이지수
다운로드[ BZT52H-B4V7.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
BZT52H-B4V3

Single Zener diodes

NXP Semiconductors
NXP Semiconductors
BZT52H-B4V7

Single Zener diodes

NXP Semiconductors
NXP Semiconductors

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵