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부품번호 | BZT52H-B7V5 기능 |
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기능 | Single Zener diodes | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BZT52H series
Single Zener diodes in a SOD123F package
Rev. 3 — 7 December 2010
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface-Mounted
Device (SMD) plastic package.
1.2 Features and benefits
Total power dissipation: ≤ 830 mW
Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
Small plastic package suitable for
surface-mounted design
Low differential resistance
AEC-Q101 qualified
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
VF
Ptot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
IF = 10 mA
Tamb ≤ 25 °C
Min Typ Max Unit
[1] - - 0.9 V
[2] - - 375 mW
[3] - - 830 mW
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1] The marking bar indicates the cathode.
Simplified outline
[1]
12
Graphic symbol
12
006aaa152
NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 10 mA
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min Typ Max Unit
[1] - - 0.9 V
Table 8. Characteristics per type; BZT52H-B2V4 to BZT52H-C24
Tj = 25 °C unless otherwise specified.
BZT52H Sel
-xxx
Working
voltage
VZ (V);
IZ = 5 mA
Maximum differential Reverse
resistance rdif (Ω)
current IR (μA)
Min Max IZ = 1 mA IZ = 5 mA Max VR (V)
2V4 B 2.35 2.45 400
85
50 1
Temperature
coefficient
SZ (mV/K);
IZ = 5 mA
Min Max
−3.5 0.0
C 2.2 2.6
2V7 B 2.65 2.75 500
83
20 1
−3.5 0.0
C 2.5 2.9
3V0 B 2.94 3.06 500
95
10 1
−3.5 0.0
C 2.8 3.2
3V3 B 3.23 3.37 500
95
5 1 −3.5 0.0
C 3.1 3.5
3V6 B 3.53 3.67 500
95
5 1 −3.5 0.0
C 3.4 3.8
3V9 B 3.82 3.98 500
95
3 1 −3.5 0.0
C 3.7 4.1
4V3 B 4.21 4.39 500
95
3 1 −3.5 0.0
C 4.0 4.6
4V7 B 4.61 4.79 500
78
3 2 −3.5 0.2
C 4.4 5.0
5V1 B 5.0 5.2 480
60
2 2 −2.7 1.2
C 4.8 5.4
5V6 B 5.49 5.71 400
40
1 2 −2.0 2.5
C 5.2 6.0
6V2 B 6.08 6.32 150
10
3 4 0.4 3.7
C 5.8 6.6
6V8 B 6.66 6.94 80
8
2 4 1.2 4.5
C 6.4 7.2
7V5 B 7.35 7.65 80 10 1 5 2.5 5.3
C 7.0 7.9
8V2 B 8.04 8.36 80
10
0.7 5
3.2 6.2
C 7.7 8.7
Diode
capacitance
Cd (pF)[1]
Max
Non-repetitive
peak reverse
current
IZSM (A)[2]
Max
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
450 6.0
300 6.0
300 6.0
300 6.0
200 6.0
200 6.0
150 4.0
150 4.0
BZT52H_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
103
PZSM
(W)
102
mbg801
300
IF
(mA)
200
mbg781
(1)
10
(2)
100
1
10−1
1 10
tp (ms)
0
0.6 0.8
1
VF (V)
(1) Tj = 25 °C (prior to surge)
(2) Tj = 150 °C (prior to surge)
Fig 1.
Non-repetitive peak reverse power dissipation
as a function of pulse duration; maximum
values
Tj = 25 °C
Fig 2. Forward current as a function of forward
voltage; typical values
0
SZ
(mV/K)
−1
mbg783
4V3
3V9
3V6
−2
−3
0
3V3
3V0
2V4
2V7
20 40 IZ (mA) 60
Fig 3.
BZT52H-B/C2V4 to BZT52H-B/C4V3
Tj = 25 °C to 150 °C
Temperature coefficient as a function of
working current; typical values
10
SZ
(mV/K)
5
0
mbg782
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
4V7
−5
0 4 8 12 16 20
IZ (mA)
Fig 4.
BZT52H-B/C4V7 to BZT52H-B/C12
Tj = 25 °C to 150 °C
Temperature coefficient as a function of
working current; typical values
BZT52H_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 December 2010
© NXP B.V. 2010. All rights reserved.
7 of 13
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BZT52H-B7V5 | Single Zener diodes | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |