CS8N60A8H Datasheet PDF - HUAJING MICROELECTRONICS
| Part Number | CS8N60A8H | |
| Description | Silicon N-Channel Power MOSFET | |
| Manufacturers | HUAJING MICROELECTRONICS | |
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Huajing Discrete Devices
Silicon N-Channel Power MOSFET
○R
CS8N60 A8H
General Description：
CS8N60 A8H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤1.2Ω)
l Low Gate Charge (Typical Data:29nC)
l Low Reverse transfer capacitances(Typical:15pF)
l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
TJ，Tstg
TL
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
VDSS
ID
PD(TC=25℃)
RDS(ON)Typ
600
8
110
0.8
Rating
600
8
5.5
32
±30
600
60
3.5
5.0
110
0.88
150，–55 to 150
300
V
A
W
Ω
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
WUX I CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 10 2012
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Huajing Discrete Devices
○R CS8N60 A8H
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
I = I 25
150 − TC
125
10
VGS=10V
1
1.00E-05
1.00E-04
14
12 PULSED TEST
VDS=30V
10
8
6
1.00E-03
1.00E-02
1.00E-01
t Pulse Width , Seconds
Figure 6 Maximun Peak Current Capability
4
3
2
1.00E+00
1.00E+01
ID= 8A
ID= 4A
ID= 2A
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25 ℃
4
2
0
0 2 4 6 8 10
Vgs , Gate to Source Voltage ， Volts
Figure 7 Typical Transfer Characteristics
1.2
PULSED TEST
Tc =25 ℃
1.1
12
1
0
4 6 8 10 12 14
Vgs , Gate to Source Voltage，Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
PULSED TEST
2.5 VGS=10V ID=2.5A
2
1 VGS=10V
1.5
0.9
1
0.8
0.5
0.7
012345
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
6
0
-100
-50
Figure
0 50 100 150
Tj, Junction temperature ,C
200
10 Typical Drian to Source on Resistance
vs Junction Temperature
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 5 of 10 2012
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CS8N60A8H electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ CS8N60A8H.PDF Datasheet ] | |
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