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PDF NOIH2SM1000A Data sheet ( Hoja de datos )
| Número de pieza | NOIH2SM1000A | |
| Descripción | HAS2 Image Sensor | |
| Fabricantes | ON Semiconductor | |
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NOIH2SM1000A
HAS2 Image Sensor
INTRODUCTION
Scope
This datasheet details the ratings, physical, geometrical,
electrical and electro-optical characteristics, and test- and
inspection-data for the High Accuracy Star Tracker (HAS2)
CMOS active pixel image sensor (CMOS APS).
The device described in this document is protected by US
patent 6,225,670 and others.
Component Type Values
Table 10 on page 9 provides a summary of the type
variants. The complete list of specifications for each type
variant is given in the specifications tables.
All specifications are given at 22 ±3°C, under nominal
clocking and bias conditions. Exceptions are noted in the
‘Remarks’ field.
Maximum Rating
Table 11 on page 9 specifies the maximum ratings. Do
not exceed these ratings at any times, during use or storage.
Physical Dimension and Geometrical Information
Figure 4 on page 24 shows the physical dimensions of the
assembled component. The geometrical information in
Figure 3 on page 10 describes the position of the die in the
package.
Pin Assignment
Figure 25 on page 39 contains the pin assignment. The
figure contains a schematic drawing and a pin list. A detailed
functional description of each pin is available in Pin List on
page 35.
Soldering Instructions
Soldering is restricted to manual soldering only. No wave
or reflow soldering is allowed. For manual soldering, the
following restrictions are applicable:
• Solder 1 pin on each of the four sides of the sensor.
• Cool down for a minimum period of 1 minute before
soldering another pin on each of the four sides.
• Repeat soldering of 1 pin on each side, including a 1
minute cool down period.
Handling Precautions
The component is susceptible to damage by electro-static
discharge. Therefore, use suitable precautions for protection
during all phases of manufacture, testing, packaging,
shipment, and any handling. Follow these guidelines:
• Always manipulate devices in an ESD controlled
environment.
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• Always store the devices in a shielded environment that
protects against ESD damage (at least a non-ESD
generating tray and a metal bag).
• Always wear a wrist strap when handling the devices
and use ESD safe gloves.
• The HAS2 is classified as class 1A (JEDEC
classification - [AD02]) device for ESD sensitivity.
For proper handling and storage conditions, refer to the
ON Semiconductor application note AN52561.
Return Material Authorization (RMA)
ON Semiconductor packages its image sensor products in
a clean room environment under strict handling procedures
and ships all image sensor products in ESD-safe,
clean-room-approved shipping containers. Products
returned to ON Semiconductor for failure analysis should be
handled under these same conditions and packed in its
original packing materials, or the customer may be liable for
the product.
Storage Information
The components must be stored in a dust-free and
temperature-, humidity-and ESD-controlled environment.
• Store devices in special ESD-safe trays such that the
glass window is never touched.
• Close the trays with EDS-safe rubber bands.
• Seal the trays in an ESD-safe conductive foil in clean
room conditions.
• For transport and storage outside a clean room, pack the
trays in a second ESD-save bag that is sealed in clean
room.
Additional Information
The HAS sensor is subject to the standard European
export regulations for dual use products. A Certificate of
Conformance will be issued upon request at no additional
charge. The CoC refers to this datasheet version.
ITAR Information
All the HAS2 type variants are ITAR-free components.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 14
1
Publication Order Number:
NOIH2SM1000A/D
1 page  
NOIH2SM1000A
the measurements must be performed at –40 (–5 +0) °C and
at +85 (+5 –0) °C.
Circuits for Electrical and Electro−optical Measurements
Circuits for performing the electro−optical tests in
Table 18 on page 14 and Table 27 on page 23 are shown in
Figure 49 on page 58 to Figure 52 on page 58.
Burn−in Test
Parameter Drift Values
The parameter drift values for power burn-in are specified
in Table 21 on page 17. Unless otherwise specified, the
measurements must be conducted at an environmental
temperature of 22 ±3°C and under nominal power supply,
bias, and timing conditions.
In addition to the drift value requirements, the devices do
not exceed the limit values of any parameter, as indicated in
Table 18 on page 14.
Conditions for High Temperature Reverse Bias Burn-in
Not Applicable
Conditions for Power Burn-in
The conditions for power burn-in is specified in Table 24
on page 19 of this specification.
Electrical Circuits for High Temperature Reverse Bias
Burn-in
Not Applicable
Electrical Circuits for Power Burn-in
Circuits to perform the power burn-in test are shown in
Figure 48 on page 57 and Figure 49 on page 58 of this
specification.
Environmental and Endurance Tests
Electrical and Electro-optical Measurements on
Completion of Environmental Test
The parameters to be measured on completion of
environmental tests are listed in Table 25 on page 20. Unless
otherwise stated, the measurements must be performed at a
environmental temperature of 22 ±3°C. Measurements of
dark current must be performed at 22 ±1°C and the actual
environmental temperature must be reported with the test
results.
Electrical and Electro-optical Measurements At
Intermediate Point During Endurance Test
The parameters to be measured at intermediate points
during endurance test of environmental tests are listed in
Table 25 on page 20. Unless otherwise stated, the
measurements must be performed at an environmental
temperature of 22 ±3°C.
Electrical and electro-optical Measurements on Completion
of Endurance Test
The parameters to be measured on completion of
endurance tests are listed in Table 25 on page 20. Unless
otherwise stated, the measurements must be performed at a
environmental temperature of 22 ±3°C.
Conditions for Operating Life Test
The conditions for operating life tests must be as specified
in Table 24 on page 19 of this specification.
Electrical Circuits for Operating Life Test
Circuits for performing the operating life test are shown
in Figure 49 on page 58 and next ones of this specification.
Conditions for High Temperature Storage Test
The temperature to be applied must be the maximum
storage temperature specified in Table 11 on page 9 of this
specification.
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5
5 Page 
NOIH2SM1000A
Table 15. GLASS LID SPECIFICATIONS
No. Characteristic
Min Typ Max Unit
Remarks
1a XY size
26.7 x 26.7 26.8 x 26.8 26.9 x 26.9
mm
1b Thickness
1.4 1.5 1.6 mm
2a Spectral range for optical coating of
440
NA
1100
nm
window
2b Reflection coefficient for window
NA <0.8 <1.3 % Over bandwidth indicated in 2a
3 Optical quality:
Scratch max width
Scratch max number
Dig max size
Dig max number
N/A N/A
mm
10
5
60
25
Table 16. ENVIRONMENTAL SPECIFICATIONS
No. Characteristic
Min
1 Operating temperature
–40
2 Storage temperature
–55
3 Sensor total dose radiation tolerance
4 Sensor SEL threshold with ADC enabled
N/A
NA
Typ Max Unit
Remarks
NA +85 °C
NA +125 °C Lower storage temperatures (up to
–80°C) have been tested and the
device survives, but this is not a
fully qualified temperature.
42 N/A krad (Si) Tested for functionality up to
300 krad, 42 krad is guaranteed
NA >110 MeV cm3 Equivalent LET value
mg-1
Table 17. ELECTRICAL SPECIFICATIONS
No Characteristic
1 Total power supply current stand-by
2 Total power supply current, operational
3 Power supply current to ADC,
operational: analog + digital
4 Power supply current to image core,
operational
5 Input impedance digital input
6 Input impedance ADC input
7 Output amplifier voltage range
8 Output amplifier gain setting 0
9 Output amplifier gain setting 1
10 Output amplifier gain setting 2
11 Output amplifier gain setting 3
12 Output amplifier offset setting 0
13 Output amplifier offset setting 31
14 Output amplifier offset setting 32
15 Output amplifier offset setting 63
16 ADC ladder network resistance
Min
15
24
17
14
3
3
2.2
NA
1.9
3.8
7.2
0.9
1.31
0.5
0.88
NA
Typ Max Unit
Remarks
19 23 mA
28.5 33.5
mA ADC at 5 MHz sampling rate
measured
19 21 mA ADC at 5 MHz sampling rate
measured
15.5 17
mA
NA NA
NA NA
2.45 2.6
1 NA
2.1 2.3
4.1 4.4
7.7 8.2
0.95 1.0
1.36 1.41
0.56 0.62
0.93 0.98
1.8 NA
MW
MW
V
– Nominal 1
measured reference
– Nominal 2
relative to setting 0
– Nominal 4
relative to setting 0
– Nominal 8
relative to setting 0
V 0 decodes to middle value
V
V
V
kW Typical value
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11
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