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부품번호 | NSL12TT1 기능 |
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기능 | High Current Surface Mount PNP Silicon Transistor | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 8 페이지수
NSL12TT1
High Current Surface
Mount PNP Silicon
Low VCE(sat) Transistor for
Battery Operated
Applications
MAXIMUM RATINGS (TA = 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Peak
Collector Current – Continuous
Electrostatic Discharge
Symbol
VCEO
VCBO
VEBO
IC
ESD
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
Thermal Resistance,
Junction to Ambient
RθJA (Note 1)
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
Thermal Resistance,
Junction to Ambient
RθJA (Note 2)
Thermal Resistance,
Junction to Lead #3
RθJL
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 X 1.0 inch Pad
Max Unit
–12 Vdc
–20 Vdc
–4.0 Vdc
–1.0 Adc
–0.5
HBM Class 3B
MM Class C
Max Unit
210 mW
1.7 mW/°C
595 °C/W
365 mW
2.9 mW/°C
340 °C/W
205 °C/W
–55 to
+150
°C
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12 VOLTS
1.0 AMPS
PNP TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
2
1
CASE 463
SOT–416/SC–75
STYLE 1
DEVICE MARKING
L2
L2 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NSL12TT1
SOT–416 3000/Tape & Reel
© Semiconductor Components Industries, LLC, 2002
February, 2002 – Rev. 2
1
Publication Order Number:
NSL12TT1/D
NSL12TT1
1.2
VCE = 3.0 V
1
0.8
0.6
0.4
–55°C
25°C
TA = 125°C
0.2
0
0.001
0.01 0.1
IC, COLLECTOR CURRENT (AMPS)
1
Figure 7. Base Emitter Turn–On Voltage vs.
Collector Current
55
50
45
40
35
30
25
20
0
f = 1 MHz
IC = 0 A
TA = 25°C
12345
VEB, EMITTER BASE VOLTAGE
Figure 8. Input Capacitance
6
35
f = 1 MHz
IE = 0 A
30 TA = 25°C
25
20
15
10
0 2 4 6 8 10 12 14
VCB, COLLECTOR BASE VOLTAGE
Figure 9. Output Capacitance
1
D = 0.50
D = 0.20
D = 0.10
0.1 D = 0.05
D = 0.01
0.01
0.0001
SINGLE PULSE
0.001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Copper Area = 0.048 square inches
RθJA = 505.7 °C/W
0.01 0.1
1
t1, TIME (s)
10
Figure 10. Normalized Thermal Response
100 1000
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4
4페이지 NSL12TT1
PACKAGE DIMENSIONS
SC–75/SOT–416
CASE 463–01
ISSUE B
S
D 3 PL
0.20 (0.008) M B
–A–
2
3
1
G –B–
K 0.20 (0.008) A
JC
LH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 0.70 0.80 0.028 0.031
B 1.40 1.80 0.055 0.071
C 0.60 0.90 0.024 0.035
D 0.15 0.30 0.006 0.012
G 1.00 BSC
0.039 BSC
H --- 0.10 --- 0.004
J 0.10 0.25 0.004 0.010
K 1.45 1.75 0.057 0.069
L 0.10 0.20 0.004 0.008
S 0.50 BSC
0.020 BSC
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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7
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
NSL12TT1 | High Current Surface Mount PNP Silicon Transistor | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |