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PDF BLF182XRS Data sheet ( Hoja de datos )
| Número de pieza | BLF182XRS | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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BLF182XR; BLF182XRS
Power LDMOS transistor
Rev. 1 — 23 July 2015
Objective data sheet
1. Product profile
1.1 General description
A 250 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
VDS
PL
(V) (W)
50 250
Gp
(dB)
28
D
(%)
72
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
1 page  
NXP Semiconductors
BLF182XR; BLF182XRS
Power LDMOS transistor
7.3 UIS avalanche energy
Table 10. Typical avalanche data per section
Tamb = 25 C; typical test data; test jig without water cooling.
IAS EAS
(A) (J)
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
<tbd>
For information see application note AN10273.
BLF182XR_BLF182XRS
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
5 of 11
5 Page 
NXP Semiconductors
BLF182XR; BLF182XRS
Power LDMOS transistor
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.1 Ruggedness in class-AB operation . . . . . . . . . 4
7.2 Impedance information . . . . . . . . . . . . . . . . . . . 4
7.3 UIS avalanche energy . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Handling information. . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
12.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 23 July 2015
Document identifier: BLF182XR_BLF182XRS
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet BLF182XRS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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| BLF182XRS | Power LDMOS transistor | NXP Semiconductors |
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