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부품번호 | BLF183XR 기능 |
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기능 | Power LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
BLF183XR; BLF183XRS
Power LDMOS transistor
Rev. 2 — 22 May 2015
Product data sheet
1. Product profile
1.1 General description
A 350 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1. Application information
Test signal
f
(MHz)
pulsed RF
108
CW 88 to 108
pulsed RF
30 to 512
CW 30 to 512
VDS
(V)
50
50
50
35
PL
(W)
350
388
400
193
Gp
(dB)
28
26
15
14
D
(%)
75
80
48
47
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
NXP Semiconductors
BLF183XR; BLF183XRS
Power LDMOS transistor
6. Characteristics
Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.5 mA
VGS(th) gate-source threshold voltage VDS = 10 V; ID = 150 mA
VGSq gate-source quiescent voltage VDS = 50 V; ID = 50 mA
IDSS drain leakage current
VGS = 0 V; VDS = 50 V
IDSX drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
IGSS gate leakage current
VGS = 11 V; VDS = 0 V
RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 5.25 A
Min
135
1.33
-
-
-
-
-
Typ Max
--
2.0 2.33
1.9 -
- 1.4
21 -
- 140
0.29 -
Unit
V
V
V
A
A
nA
Table 7. AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
Crs
Ciss
Coss
feedback capacitance
input capacitance
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
VGS = 0 V; VDS = 50 V; f = 1 MHz
Min Typ
- 1.1
- 156
- 51
Max Unit
- pF
- pF
- pF
Table 8. RF characteristics
Test signal: pulsed RF; tp = 100 s; = 20 %; f = 108 MHz; RF performance at VDS = 50 V;
IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ Max Unit
Gp power gain
PL = 350 W
RLin input return loss PL = 350 W
26.5 28
- 10
-
7
dB
dB
D
drain efficiency
PL = 350 W
71 75 -
%
BLF183XR_BLF183XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
4 of 15
4페이지 NXP Semiconductors
BLF183XR; BLF183XRS
Power LDMOS transistor
Table 11. List of components …continued
For test circuit see Figure 4.
Component Description
Value
Remarks
C16 multilayer ceramic chip capacitor 7.5 pF [1]
C17,C18
multilayer ceramic chip capacitor 120 pF
[1]
C19, C20
electrolytic capacitor
2200 F, 64 V
L1, L2, L3, L4 3.0 turn 1.0 mm copper wire
D = 3.0 mm
R1, R2
resistor
510
SMD 1206
R3, R4
shunt resistor
0.01
Ohmite:
FC4L110R010FER
R5, R6
metal film resistor
10 , 0.6 W
SMD 1206
T1, T2
semi rigid coax
50 ,
length = 160 mm
EZ Form:
EZ-141-AL-TP-M17
[1] American Technical Ceramics type 100B or capacitor of same quality.
7.5 Graphical data
The following figures are measured in a class-AB production test circuit.
7.5.1 1-Tone CW pulsed
*S
G%
DDD
Ș'
Ș'
*S
3/
G%P
DDD
,GHDO3/
3/
3/:
VDS = 50 V; IDq = 100 mA; f = 108 MHz; tp = 100 s;
= 20 %.
Fig 5. Power gain and drain efficiency as function of
output power; typical values
3LG%P
VDS = 50 V; IDq = 100 mA; f = 108 MHz; tp = 100 s;
= 20 %.
(1) PL(1dB) = 55.5 dBm (354 W)
(2) PL(3dB) = 56.1 dBm (404 W)
Fig 6. Output power as a function of input power;
typical values
BLF183XR_BLF183XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 22 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
7 of 15
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부품번호 | 상세설명 및 기능 | 제조사 |
BLF183XR | Power LDMOS transistor | NXP Semiconductors |
BLF183XRS | Power LDMOS transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |