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부품번호 | BLF2425M7LS100 기능 |
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기능 | Power LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 13 페이지수
BLF2425M7L100;
BLF2425M7LS100
Power LDMOS transistor
Rev. 1 — 6 December 2013
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz
to 2400 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
IDq VDS PL(AV) Gp D ACPR885k ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
(dBc)
IS-95
2300 to 2400 900 28 20
18 27 46[1]
-
1 carrier W-CDMA 2300 to 2400 900 28 30
18.7 33 -
40[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for industrial and multi carrier applications in the 2300 MHz to
2400 MHz frequency range
NXP Semiconductors
BLF2425M7L(S)100
Power LDMOS transistor
7.2 Graphical data
7.2.1 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
*S
G%
DDQ
Ș'
DDQ
3/:
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 1. Power gain as a function of output power;
typical values
$3&5N
G%F
DDQ
3/:
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 2. Drain efficiency as a function of output power;
typical values
$3&5N
G%F
DDQ
3/:
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 3. Adjacent channel power ratio (885 kHz) as a
function of output power; typical values
3/:
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 4. Adjacent channel power ratio (1980 kHz) as a
function of output power; typical values
BLF2425M7L100_2425M7LS100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 December 2013
© NXP B.V. 2013. All rights reserved.
4 of 13
4페이지 NXP Semiconductors
BLF2425M7L(S)100
Power LDMOS transistor
3$5
G%
DDQ
3/0
:
DDQ
3/:
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 13. Peak-to-average power ratio as a function of
output power; typical values
3/:
VDS = 28 V; IDq = 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 14. Peak output power as a function of output
power; typical values
BLF2425M7L100_2425M7LS100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 6 December 2013
© NXP B.V. 2013. All rights reserved.
7 of 13
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BLF2425M7LS100 | Power LDMOS transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |