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부품번호 | BLF2425M7L250P 기능 |
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기능 | Power LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
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BLF2425M7L250P;
BLF2425M7LS250P
Power LDMOS transistor
Rev. 4 — 12 July 2013
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW
applications and are assembled in high performance ceramic packages, available in
eared and earless versions
Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal
f
VDS
PL(AV)
Gp
(MHz)
(V) (W)
(dB)
CW
2450
28 250
15
D
(%)
51
1.2 Features and benefits
High efficiency
Easy power control
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency
range such as ISM and industrial heating.
NXP Semiconductors
BLF2425M7L(S)250P
Power LDMOS transistor
7.2 Impedance information
Table 8. Typical impedance
Measured load-pull data half device. Typical values unless otherwise specified. IDq = 20 mA;
VDS = 28 V.
ZS and ZL defined in Figure 1.
f
(MHz)
ZS
()
ZL
()
2400
2.3 6.3j
3.8 2.7j
2450
3.3 6.0j
2.5 2.9j
2500
4.1 6.0j
3.3 2.3j
gate 1
ZS
gate 2
drain 1
ZL
drain 2
001aak544
Fig 1. Definition of transistor impedance
7.3 Test circuit
&
&
&
&
&
&
&
&
&
&
&
5
5
5
&
& &
&
&
&
& &
Fig 2.
Printed-Circuit Board (PCB): Rogers RO4350B; thickness = 0.76 mm.
See Table 9 for list of components.
Component layout for test circuit
DDD
BLF2425M7L250P_2425M7LS250P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
4 of 11
4페이지 NXP Semiconductors
BLF2425M7L(S)250P
Power LDMOS transistor
Earless flanged balanced ceramic package; 4 leads
SOT539B
D
A
F
5
D1 D
U1
H1
12
w2 D
c
H U2
L
34
b
e
w3
E1 E
Q
Dimensions
0 5 10 mm
scale
Unit(1) A b c D D1 E E1 e F H H1 L Q U1 U2 w2 w3
max 4.7
mm nom
min 4.2
11.81 0.18 31.55 31.52 9.5
11.56 0.10 30.94 30.96 9.3
9.53 1.75 17.12 25.53 3.48 2.26 32.39 10.29
13.72
0.25
9.27 1.50 16.10 25.27 2.97 2.01 32.13 10.03
max 0.185 0.465 0.007 1.242 1.241 0.374 0.375
0.069 0.674 1.005 0.137 0.089 1.275 0.405
inches nom
0.54
0.01
min 0.165 0.455 0.004 1.218 1.219 0.366 0.365
0.059 0.634 0.995 0.117 0.079 1.265 0.395
Note
1. millimeter dimensions are derived from the original inch dimensions.
0.25
0.01
sot539b_po
Outline
version
References
IEC
JEDEC
JEITA
SOT539B
European
projection
Issue date
12-05-02
13-05-24
Fig 6. Package outline SOT539B
BLF2425M7L250P_2425M7LS250P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 July 2013
© NXP B.V. 2013. All rights reserved.
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |