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부품번호 | BLF574XR 기능 |
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기능 | Power LDMOS transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 14 페이지수
BLF574XR; BLF574XRS
Power LDMOS transistor
Rev. 1 — 20 June 2013
Product data sheet
1. Product profile
1.1 General description
A 600 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 500 MHz band. This product is an enhanced version of the
BLF574 using NXP's XR process to provide maximum ruggedness capability in the most
severe applications without compromising the RF performance.
Table 1. Application information
Test signal
f
(MHz)
CW 225
pulsed RF
225
VDS
PL
Gp
(V) (W) (dB)
50 600 23.5
50 600 24
D
(%)
74.5
74.7
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 500 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Industrial, scientific and medical applications
Broadcast transmitter applications
NXP Semiconductors
BLF574XR; BLF574XRS
Power LDMOS transistor
&RVV
S)
DDD
9'69
Fig 1.
VGS = 0 V; f = 1 MHz.
Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF574XR and BLF574XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS = 50 V; IDq = 100 mA; PL = 600 W pulsed; f = 225 MHz.
7.2 Impedance information
gate 1
Zi
gate 2
Fig 2. Definition of transistor impedance
drain 1
ZL
drain 2
001aan207
Table 9. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 600 W.
f Zi
ZL
(MHz)
()
()
225 4.67 j5.47
5.66 + j2.05
BLF574XR_BLF574XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
4 of 14
4페이지 NXP Semiconductors
BLF574XR; BLF574XRS
Power LDMOS transistor
*S
G%
DDD
3/:
VDS = 50 V; f = 225 MHz.
(1) IDq = 50 mA
(2) IDq = 100 mA
(3) IDq = 200 mA
(4) IDq = 300 mA
(5) IDq = 400 mA
(6) IDq = 500 mA
Fig 6. Power gain as a function of output power;
typical values
Ș'
DDD
3/:
VDS = 50 V; f = 225 MHz.
(1) IDq = 50 mA
(2) IDq = 100 mA
(3) IDq = 200 mA
(4) IDq = 300 mA
(5) IDq = 400 mA
(6) IDq = 500 mA
Fig 7. Drain efficiency as a function of output power;
typical values
BLF574XR_BLF574XRS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2013
© NXP B.V. 2013. All rights reserved.
7 of 14
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부품번호 | 상세설명 및 기능 | 제조사 |
BLF574XR | Power LDMOS transistor | NXP Semiconductors |
BLF574XRS | Power LDMOS transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |